Patents Assigned to SanDisk Technology Inc.
  • Back Gate Operation with Elevated Threshold Voltage
    Publication number: 20150085574
    Abstract: In a three dimensional NAND memory, increased threshold voltages in back gate transistors may cause program failures, particularly along word lines near back gates. When back gate transistor threshold voltages cannot be returned to a desired threshold voltage range then modified program conditions, including increased back gate voltage, may be used to allow programming.
    Type: Application
    Filed: September 20, 2013
    Publication date: March 26, 2015
    Applicant: SanDisk Technology Inc.
    Inventors: Deepak Raghu, Gautam Dusija, Chris Avila, Yingda Dong, Man Mui