Abstract: An annular dielectric spacer can be formed at a level of a joint-level dielectric material layer between vertically neighboring pairs of alternating stacks of insulating layers and spacer material layers. After formation of a memory opening through multiple alternating stacks and formation of a memory film therein, an anisotropic etch can be performed to remove a horizontal bottom portion of the memory film. The annular dielectric spacer can protect underlying portions of the memory film during the anisotropic etch. In addition, a silicon nitride barrier may be employed to suppress hydrogen diffusion at an edge region of peripheral devices.
Type:
Grant
Filed:
May 25, 2018
Date of Patent:
August 18, 2020
Assignee:
SANDISK TECHNOLOGY LLC
Inventors:
Dai Iwata, Hiroyuki Ogawa, Kazutaka Yoshizawa, Yasuaki Yonemochi