Patents Assigned to SANDISK TECHNOLOGY LLC
  • Patent number: 10748919
    Abstract: An annular dielectric spacer can be formed at a level of a joint-level dielectric material layer between vertically neighboring pairs of alternating stacks of insulating layers and spacer material layers. After formation of a memory opening through multiple alternating stacks and formation of a memory film therein, an anisotropic etch can be performed to remove a horizontal bottom portion of the memory film. The annular dielectric spacer can protect underlying portions of the memory film during the anisotropic etch. In addition, a silicon nitride barrier may be employed to suppress hydrogen diffusion at an edge region of peripheral devices.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: August 18, 2020
    Assignee: SANDISK TECHNOLOGY LLC
    Inventors: Dai Iwata, Hiroyuki Ogawa, Kazutaka Yoshizawa, Yasuaki Yonemochi