Patents Assigned to Sango Electric Co., Ltd.
  • Patent number: 5278015
    Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.
    Type: Grant
    Filed: July 23, 1992
    Date of Patent: January 11, 1994
    Assignee: Sango Electric Co., Ltd.
    Inventors: Masayuki Iwamoto, Koji Minami, Toshihiko Yamaoki