Patents Assigned to SANKEI ENGINEERING CO., LTD
  • Publication number: 20130323421
    Abstract: This is to provide a film forming method, etc., which can form a film containing a high concentration of an impurity under atmospheric pressure efficiently without using a harmful and poisonous gas. The film forming method is constituted by heating a solid source such as boron and phosphorus pentaoxide, etc., and evaporating to generate a gas, and the obtained gas is jetted to the surface(s) of a preheated substrate to form a film.
    Type: Application
    Filed: February 14, 2012
    Publication date: December 5, 2013
    Applicant: SANKEI ENGINEERING CO., LTD
    Inventors: Koji Honma, Hitoshi Inuzuka