Abstract: An object is to suppress a lift of an external terminal when an external force is applied, thereby improving the reliability of a semiconductor device. A heat radiating plate 10 having on one main surface a circuit area 54 in which a semiconductor element 50 is arranged, a pair of terminals 31 and 32 connected to the semiconductor element 50, a resin housing 20 that covers the circuit area 54 of the heat radiating plate 10 to seal the semiconductor element 50, and has a terminal surface 22 formed on an upper surface, a pair of side surfaces in the longitudinal direction, and a pair of front and rear surfaces in the lateral direction, are included. The resin housing 20 has a pair of bending contact portions 22e and 23e that come into respectively contact with the pair of terminals 31 and 32 to define bending positions of the terminals 31 and 32. The pair of bending contact portions 22e and 23e are formed to have different heights.

Abstract: A semiconductor chip is provided on a semiconductor circuit base on one surface of an insulating substrate. A reinforcement and balance base is provided on the one surface of the insulating substrate spaced to the semiconductor circuit base. The insulating substrate 4, the semiconductor circuit base, the semiconductor chip, and the reinforcement and balance base are sealed into a resin-molded sealing body. The sealing body has resin non-adhering portions.

Abstract: In a gate drive circuit of which an N-channel MOSFET and a P-channel MOSFET are connected in a push-pull manner to amplify an input pulse signal and drive an output element, a temperature correction circuit is connected between gate terminals of the N-channel MOSFET and the P-channel MOSFET. The temperature correction circuit lowers each of gate voltages of the N-channel MOSFET and the P-channel MOSFET as ambient temperature rises.

Abstract: Provided is a power supply system in which two or more power supply units are optionally connected and used in any operation mode.

Abstract: An object of the present invention is to enable two or more power supply units constituting a power supply system to be synchronized to stably operate the power supply system.

Abstract: Provided is a power supply system in which two or more power supply units are optionally connected and used in any operation mode. A power supply system 100 includes two or more power supply units 10 to 13, the power supply units 10 to 13 cooperating to supply DC power to a shared load 22, the power supply units 10 to 13 including a power supply main circuit 30 that converts AC power inputted from the outside into DC power; a control unit 36 that controls the power supply main circuit 30; a pair of synchronous terminals Z1, Z2 respectively connected to a pair of synchronous signal lines ZCL; a transmission unit 35 that outputs an error signal ER by establishing conduction between the pair of synchronous signal lines ZCL upon detection of an abnormality; and a reception unit 35 that detects a conductive state between the pair of synchronous signal lines ZCL and that receives the error signal ER, wherein the power supply main circuit 30 stops outputting based on timing of receiving the error signal ER.

Abstract: An object is to provide a power semiconductor module having a small ON-resistance and capable of operating at a high frequency. Included are: a semiconductor chip 2 configured to supply a power source, and including a voltage-driven switching element, and a gate electrode 20G provided on a main surface of the semiconductor chip 2; a heat dissipation sheet 3 disposed opposite the main surface of the semiconductor chip 2, and configured to dissipate heat of the semiconductor chip 2; a wiring board 4 disposed between the semiconductor chip 2 and the heat dissipation sheet 3, and including a gate wiring pattern 40G connected to an external terminal 6G; an interposer 5 including a sheet-like base material disposed between the semiconductor chip 2 and the wiring board 4, and a gate resistor 50G in the sheet-like base material and interposed between the gate electrode 20G and the gate wiring pattern 40G; and a resin housing 7 that seals the semiconductor chip 2, the wiring board 4, and the interposer 5.

Abstract: A semiconductor-module external terminal includes a bottom portion to be soldered and a terminal body vertically bent from the bottom portion, and the terminal body includes a first groove on a left end side and a second groove on a right end side of a bending portion which is bent immediately above the bottom portion, and the first groove and the second groove are asymmetrical with respect to a center line passing the terminal body in a vertical direction.

Abstract: A power supply circuit for measuring transient thermal resistances includes an inverter circuit provided on a primary side of a transformer and controlled by a PWM signal, a rectifier circuit provided on a secondary side of the transformer and including a DC reactor, and a control circuit controlling the PWM signal so as to output a pulsed output current from the rectifier circuit to a semiconductor device to be measured. The control circuit sets a first PWM frequency at rising timing of the output current, and sets a second PWM frequency when a predetermined time t1 elapses from the rising timing of the output current. The control circuit sets the first PWM frequency higher than the second PWM frequency.

Abstract: An object is to suppress a lift of an external terminal when an external force is applied, thereby improving the reliability of a semiconductor device. A heat radiating plate 10 having on one main surface a circuit area 54 in which a semiconductor element 50 is arranged, a pair of terminals 31 and 32 connected to the semiconductor element 50, a resin housing 20 that covers the circuit area 54 of the heat radiating plate 10 to seal the semiconductor element 50, and has a terminal surface 22 formed on an upper surface, a pair of side surfaces in the longitudinal direction, and a pair of front and rear surfaces in the lateral direction, are included. The resin housing 20 has a pair of bending contact portions 22e and 23e that come into respectively contact with the pair of terminals 31 and 32 to define bending positions of the terminals 31 and 32. The pair of bending contact portions 22e and 23e are formed to have different heights.

Abstract: A semiconductor chip 10 is provided on a semiconductor circuit base 8 on one surface of an insulating substrate 4. A circuit base 26 is provided on the one surface of the insulating substrate 4 spaced to the semiconductor circuit base 8. The insulating substrate 4, the semiconductor circuit base 8, the semiconductor chip 10, and the reinforcement and balance base 26 are sealed into a resin-molded sealing body 2. The sealing body 2 has resin non-adhering portions 34.

Abstract: Realizing a constant-current control even in a stable state of a lamp without increasing a rated output of a power supply. In a stable state of the lamp in which a change value of a lamp voltage after a discharge lamp is turned on becomes less than a certain value, when the lamp voltage rises, a discharge lamp lighting control apparatus changes a current command value to perform a constant-current control. This change is a change from a first current command value at the time when the discharge lamp is turned on to a second current command value that is smaller than the former by a predetermined value. Using this second current command value, the constant-current control is performed. Even after that, the second current command value is changed to a smaller value every time the lamp voltage rises, and the constant-current control is performed using the second current command value.

Abstract: The present invention provides a laminated member that prevents contact of a semiconductor chip and an external leading terminal etc. without increasing the number of components. The laminated member is a laminated member having a three-layer structure, comprising: an upper highly thermally conductive layer; a lower highly thermally conductive layer; and an intermediate layer having a low thermal expansion coefficient, wherein the above-described laminated member is larger than the above-described semiconductor chip in a plan view, and wherein a height position of the above-described first peripheral edge area is located at a certain distance below a height position of the above-described first bonding area, and a height position of the second peripheral edge area of the above-described second bonding area is located at a certain distance above a height position of the above-described second bonding area.

Abstract: A main unit 2 and a subsidiary unit 4 include two inverters 6m, 8m and 6s, 8s, and PWM control circuits 26m, 26s, respectively. A changeover switch 20 operates to simultaneously connect the inputs of the two inverters of the main unit 2 and the inputs of the two inverters of the subsidiary unit 4 in series or in parallel. An imbalance detecting circuit 28 detects imbalance in the input voltages to the two inverters of the main unit 2, and provides the detection result to the PWM control circuits 26m and 26s. The PWM control circuit 26m controls the inverters 6m and 8m of the main unit 2 in accordance with the detection result supplied from the imbalance detecting circuit 26m, and the PWM control circuit 26s controls the subsidiary unit 4 in accordance with the detection result supplied from the imbalance detecting circuit 26m. The input current to the main unit 2 is larger than the input current to the subsidiary unit 4.

Abstract: The present invention provides a laminated member that prevents contact of a semiconductor chip and an external leading terminal etc. without increasing the number of components. The laminated member is a laminated member having a three-layer structure, comprising: an upper highly thermally conductive layer; a lower highly thermally conductive layer; and an intermediate layer having low thermal expansion coefficient, wherein the above-described laminated member is larger than the above-described semiconductor chip in a plan view, and wherein a height position of the above-described first peripheral edge area is located at certain distance below a height position of the above-described first bonding area, and a height position of the second peripheral edge area of the above-described second bonding area is located at certain distance above a height position of the above-described second bonding area.

Abstract: An arc welding apparatus includes: a switching device connected to both terminals of a secondary winding of a transformer whose opposite primary winding serves as a smoothing reactor on an inverter's secondary side; an output voltage detector detecting an output voltage between a welding wire and a workpiece; and a control circuit controlling the switching device and a circuit on the inverter's primary side. The control circuit includes: a first control portion that turns off the circuit on the inverter's primary side and turns on the switching device when the output voltage detected by the output voltage detector rises to a first predetermined voltage; and a second control portion that turns on the circuit on the inverter's primary side and turns off the switching device after a lapse of a predetermined time after the switching device is turned on.

Abstract: A welding machine power supply apparatus outputs welding current in accordance with welding conditions set through operation of a display and setting unit (20). When a welding operation is ended while the welding machine power supply apparatus is operating, the welding conditions effective at the time the welding operation is ended are automatically stored in a memory (16). When any ones or more of the welding conditions at the time when the welding operation is resumed by the use of the welding machine power supply apparatus are different from the one or ones which were effective when the welding operation was ended, a load button (70), a rotary encoder (64) and a set button (72) are operated to cause a control unit (14) to read out the welding conditions stored in the memory (16) which were effective when the welding operation was ended, and to set the read-out welding conditions in the welding machine power supply apparatus.

Abstract: A semiconductor module includes a rectangular base plate; a substrate which is placed on the base plate and on which a circuit including a semiconductor chip and so forth is formed; a rectangular parallelepiped case made of resin that is attached to the base plate and houses the substrate within; and a plurality of external terminals lower ends of which are fixed to the substrate with upper ends thereof being exposed on a top face of the case. The case is provided with a first case opening portion and a second case opening portion that are respectively formed by cutting off a front face and a rear face of the case from an upper edge thereof along a longitudinal direction thereof; and the top face of the case between the first case opening portion and the second case opening portion includes an external terminal holding portion to hold the plurality of external terminals along the longitudinal direction with the upper ends thereof being exposed.