Abstract: Provided are a semiconductor device and a method of manufacturing the same. In semiconductor devices of the conventional technologies, the chip size is increased when a breakdown voltage is increased. In the semiconductor device of this invention, an end of a pn junction interface (5) of a collector region (2) and a base region (3) is formed of a mesa groove (6) made of a trench. Thus, the chip size is not increased even when the mesa groove (6) is deeply formed to increase the breakdown voltage.
Type:
Application
Filed:
October 12, 2007
Publication date:
February 25, 2010
Applicants:
Sanyo Electric Co., Ltd., Sanyo Semoconductor Co., Ltd.