Abstract: The present invention provides for a method and articles produced from this method for eutectically bonding together single crystal elements, such as sapphire, to form a strong bond therebetween which can withstand high temperatures and chemical attack. The eutectic bonding mixture of the present invention can include a Group IIIA compound, such as yttria.

Abstract: An electrostatic wafer-holding chuck includes first and second dielectric plates formed of single crystal aluminum oxide and at least one electrode disposed within a recess formed in the first dielectric plate. The second dielectric plate has a top wafer-supporting surface that has a fluid distribution network formed therein. The fluid distribution network channels a heat transfer medium to the backside of the wafer. When the first and second dielectric plates are assembled, the first dielectric plate is disposed contiguous to the second dielectric plate and then are diffusively joined together to form a monolithic, hermetically-sealed electrostatic chuck.

Abstract: A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.