Abstract: In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of micro-LED structures. The semiconductor wafer may include an LED epilayer including an n-GaN layer, a p-GaN layer, and an active layer positioned between the n-GaN layer and the p-GaN layer. Prior to the bonding of the semiconductor layer to the CMOS wafer, a stress release pattern may be formed in the LED epilayer. The stress release pattern may include a plurality of geometrical shapes (e.g., squares, rectangles, hexagons, rings, etc.) that may facilitate the release of mechanical stresses induced during the subsequent processing of the semiconductor wafer and/or the fabrication of the micro-LEDs.

Abstract: In accordance with one or more aspects of the present disclosure, an apparatus incorporating micro-LEDs is provided. The apparatus may include a first plurality of light-emitting devices for emitting light of a first color, a second light-emitting device for emitting light of a second color, and a light-conversion structure that converts light emitted by at least one of the first plurality of light-emitting devices into light of a third color. The first plurality of light-emitting devices may be fabricated on a substrate. The second light-emitting device is fabricated on a conductive via that is fabricated on the substrate. The light-conversion structure may include a plurality of quantum dots.

Abstract: In accordance with one or more aspects of the present disclosure, an apparatus including pixels is provided. The apparatus may include a first micro light-emitting device configured to emit light of a first color, a second micro light-emitting device configured to emit light of a second color, and a third micro light-emitting device for emitting light of a third color. The first micro light-emitting device includes a first light-emitting structure for emitting light of the first color. The second micro light-emitting device includes a second light-emitting structure for emitting light of the first color. The third micro light-emitting device includes a light-emitting structure for emitting light of the third color that is formed on a third light-emitting structure for emitting light of the first color.

Abstract: In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of micro-LED structures. The semiconductor wafer may include an LED epilayer including an n-GaN layer, a p-GaN layer, and an active layer positioned between the n-GaN layer and the p-GaN layer. Prior to the bonding of the semiconductor layer to the CMOS wafer, a stress release pattern may be formed in the LED epilayer. The stress release pattern may include a plurality of geometrical shapes (e.g., squares, rectangles, hexagons, rings, etc.) that may facilitate the release of mechanical stresses induced during the subsequent processing of the semiconductor wafer and/or the fabrication of the micro-LEDs.

Abstract: In accordance with one or more aspects of the present disclosure, an apparatus including micro-LEDs is provided. The apparatus may include a first nanoporous structure fabricated on a first light-emitting device and a second nanoporous structure fabricated on a second light-emitting device. A first plurality quantum dots are placed in the first nanoporous structure for converting light emitted by the first light-emitting device into light of a first color. A second plurality quantum dots are placed in the second nanoporous structure for converting light emitted by the second light-emitting device into light a second color. The apparatus further includes a third light-emitting device that emits light of a third color. The apparatus further includes a conductive layer of a conductive material. The conductive layer contacts the top surfaces of the first light-emitting device, the second surface of the second light-emitting device, and the third light-emitting device.

Abstract: Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: providing a growth template comprising a semiconductor layer of a group III-nitride material with a nonpolar orientation or a semipolar orientation; fabricating a mask on the semiconductor layer for preventing defects in the growth template from propagating into group III-nitride materials grown on the growth template; and forming, on the mask, an epitaxial layer of the group III-nitride with the nonpolar orientation or semipolar orientation. The mask may include a stripe pattern comprising SiO2 and/or SiN. Forming the epitaxial layer of the group III-nitride material may include growing the group III-nitride material in the semipolar orientation or the nonpolar orientation in nitrogen carrier gas.

Abstract: In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and a light-conversion device with embedded quantum dots. In some embodiments, a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, and a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color. The third light-emitting device emits light of a third color.

Abstract: In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and a light-conversion device with embedded quantum dots. In some embodiments, a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, and a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color. The third light-emitting device emits light of a third color.

Abstract: Aspects of the disclosure provide for light conversion devices incorporating quantum dots and methods of fabricating the same. In accordance with some embodiments of the present disclosure, a light conversion device is provided. The light conversion device may include. a porous structure comprising one or more nanoporous materials, wherein the one or more nanoporous materials comprise a plurality of pores; and a plurality of quantum dots placed in the porous structure, wherein the plurality of quantum dots comprises a first plurality of quantum dots configured to convert light of a first color into light of a second color, and a second plurality of quantum dots configured to convert the light of the first color into light of a third color. Each of the plurality of pores may have a nanoscale size. The nonporous materials may further include a matrix comprising a semiconductor material, glass, plastic, metal, polymer, etc.

Abstract: In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and a light-conversion device with embedded quantum dots. In some embodiments, a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, and a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color. The third light-emitting device emits light of a third color.

Abstract: In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.

Abstract: In accordance with some embodiments of the present disclosure, a computing device is provided. The computing device may include a display device and one or more sensors positioned beneath the display device. The one or more sensors may be configured to detect light passed through a display area of the display device. The display area of the display device may include a plurality of semiconductor devices for emitting light. The sensors may be positioned beneath the display area of the display device. In some embodiments, the sensors may further generate sensing data based on the detected light. The computing device may perform one or more operations based on the sensing data, such as adjusting a brightness of the display device, turning on or off the display device, locking or unlocking a screen of the computing device, performing one or more operations using an application running on the computing device, etc.

Abstract: In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.

Abstract: Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: forming, on a growth template, an epitaxial layer of a group III-nitride material comprising a surface with a first crystallographic orientation, wherein the first crystallographic orientation comprises a semipolar orientation or a nonpolar orientation; and separating the epitaxial layer of the group III-nitride material from the growth template to produce the group III-nitride substrate, wherein the growth template comprises a semiconductor layer of the group III-nitride material. The group III-nitride material may include gallium.

Abstract: Aspects of the disclosure provide for mechanisms for fabricating light extraction structures for semiconductor devices (e.g., light-emitting devices). In accordance with some embodiments, a semiconductor device is provided. The semiconductor device may include: a first semiconductor layer including an epitaxial layer of a semiconductor material; a second semiconductor layer comprising an active layer; and a light-reflection layer configured to cause at least a portion of light produced by the active layer to emerge from the semiconductor device via a surface of the second semiconductor layer, wherein the light-reflection layer is positioned between the first semiconductor layer and the second semiconductor layer. In some embodiments, the semiconductor material includes gallium nitride. In some embodiments, the light-reflection layer includes a layer of gallium.

Abstract: Aspects of the disclosure provide for mechanisms for forming air voids for semiconductor fabrication. In accordance with some embodiments, a method for forming air voids may include forming a first semiconductor layer including a first group III material and a second group III material on a substrate; forming a plurality of air voids in the first semiconductor layer by removing at least a portion of the second group III material from the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer may include an epitaxial layer of a group III-V material. In some embodiments, the first group III material and the second group III material may be gallium and indium, respectively.