Abstract: Self-aligned FET devices and associated fabrication methods are disclosed herein. A disclosed process for forming a FET includes forming a first mask, implanting a deep well region in a drift region using the first mask, forming a spacer in contact with the first mask, and implanting a shallow well region in the drift region using the first mask and the spacer. A disclosed FET includes a drift region, a shallow well region, a deep well region located between the shallow well region and the drift region, and a junction field effect region: in contact with the shallow well region, the drift region, and the deep well region; and having a junction field effect doping concentration of the first conductivity type. The FETs can include a hybrid channel formed by a portion of the junction field effect region, as influenced by the deep well region, and the shallow well region.
Type:
Grant
Filed:
February 28, 2022
Date of Patent:
November 21, 2023
Assignee:
SCDevice LLC
Inventors:
Sudarsan Uppili, David Lee Snyder, Scott Joseph Alberhasky
Abstract: Self-aligned FET devices and associated fabrication methods are disclosed herein. A disclosed process for forming a FET includes forming a first mask, implanting a deep well region in a drift region using the first mask, forming a spacer in contact with the first mask, and implanting a shallow well region in the drift region using the first mask and the spacer. A disclosed FET includes a drift region, a shallow well region, a deep well region located between the shallow well region and the drift region, and a junction field effect region: in contact with the shallow well region, the drift region, and the deep well region; and having a junction field effect doping concentration of the first conductivity type. The FETs can include a hybrid channel formed by a portion of the junction field effect region, as influenced by the deep well region, and the shallow well region.
Type:
Application
Filed:
February 28, 2022
Publication date:
August 31, 2023
Applicant:
SCDevice LLC
Inventors:
Sudarsan Uppili, David Lee Snyder, Scott Joseph Alberhasky