Patents Assigned to Schlumberger Technology Corporaton
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Patent number: 11774631Abstract: A method can include receiving neutron data and density data for a borehole in a geologic formation; determining a migration length value for a layer of the geologic formation based at least in part on the neutron data; forward modeling at least the layer based at least in part on the migration length value and the density data; and outputting, based at least in part on the forward modeling, modeled neutron data for the layer.Type: GrantFiled: May 10, 2019Date of Patent: October 3, 2023Assignee: Schlumberger Technology CorporatonInventors: Joan Abadie, Mohammad Taghi Salehi, Koji Ito, John Rasmus, Xiao Bo Hong
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Patent number: 10408010Abstract: A blowout preventer and a method for drilling, of which the blowout preventer includes a body defining a ram recess and an annular recess, the ram recess and the annular recess being separated apart. The blowout preventer also includes a ram positioned at least partially in the ram recess and movable with respect to the body, the ram having a distal end configured to engage a tubular and a proximal end positioned within the first recess. The blowout preventer further includes an actuation assembly including an actuation chamber, the annular recess being positioned between the actuation chamber and the ram recess. The blowout preventer also includes a buffer supply system configured to circulate a fluid through the annular recess, to prevent leakage of fluid from the ram recess into the actuation chamber.Type: GrantFiled: October 7, 2016Date of Patent: September 10, 2019Assignee: SCHLUMBERGER TECHNOLOGY CORPORATONInventor: Jacques Orban
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Patent number: 10120099Abstract: Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).Type: GrantFiled: July 21, 2015Date of Patent: November 6, 2018Assignee: SCHLUMBERGER TECHNOLOGY CORPORATONInventors: Frederic Gicquel, Olivier G. Philip, Christian Stoller, Zilu Zhou
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Patent number: 9983323Abstract: Systems, methods, and computer-readable media for determining a velocity model. The method includes receiving a first velocity model having a first symmetry approximation of a media of a subterranean domain, receiving seismic data representing a subterranean formation, and determining, by operation of a processor, a second velocity model having a second symmetry approximation of the media, the second symmetry approximation being less symmetric than the first symmetry approximation. The second velocity model is determined based on an estimate of residual moveout as a function of azimuth and one or more differentials that relate one or more changes in residual moveout as a function of azimuth to one or more orthorhombic parameters. The method also including migrating the seismic data using the second velocity model.Type: GrantFiled: January 13, 2016Date of Patent: May 29, 2018Assignee: Schlumberger Technology CorporatonInventors: Sribharath Kainkaryam, David Nichols, Robert Bloor, Marvin Decker
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Patent number: 8027794Abstract: This disclosure describes measuring properties of a multiphase mixture flowing in a pipe using probes with different sensitivity depths. By generating annular flow of the multiphase mixture in the pipe, the probes may be contacted with the liquid phase of the mixture flowing on an inner-wall of the pipe and apparent permittivities of the annular flow measured by the probes. These measured permittivities may be processed to determine liquid fraction of the annular flow and water-in-liquid ratio of the liquid phase of the annular flow.Type: GrantFiled: February 9, 2009Date of Patent: September 27, 2011Assignee: Schlumberger Technology CorporatonInventor: Cheng-gang Xie
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Patent number: 8003577Abstract: A method of treating a subterranean formation penetrated by a wellbore utilizes a treating fluid formed from an aqueous solution of a water-soluble polymer. The treating fluid further contains a crosslinking agent and an optional delayed release alkaline additive. The delayed release alkaline additive may be at least one of urea, a urea derivative, a solid alkaline earth metal carbonate, a solid alkaline earth metal oxide and combinations of these. The treating fluid further includes an acidic pH adjusting agent used in an amount to provide the treating fluid with a pH of less than about 5. The treating fluid is then introduced into the formation.Type: GrantFiled: March 22, 2007Date of Patent: August 23, 2011Assignee: Schlumberger Technology CorporatonInventors: Leiming Li, Paul R. Howard, Carlos Abad, Michael D. Parris, Lijun Lin, Andrey Mirakyan, Richard D. Hutchins, Baudel William Quintero
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Publication number: 20110077922Abstract: The invention relates to a method of performing an oilfield operation of an oilfield having at least one wellsite, each wellsite having a wellbore penetrating a subterranean formation for extracting fluid from an underground reservoir therein. The method includes determining a time-step for simulating the reservoir, the reservoir being represented as a plurality of gridded cells and being modeled as a multi-phase system using a plurality of partial differential equations, calculating a plurality of Courant-Friedrichs-Lewy (CFL) conditions of the reservoir model corresponding to the time-step, the plurality of CFL conditions comprising a temperature CFL condition, a composition CFL condition, and a saturation CFL condition, simulating a first cell of the plurality of gridded cells with an Implicit Pressure, Explicit Saturations (IMPES) system, and simulating a second cell of the plurality of gridded cells with a Fully Implicit Method (FIM) system.Type: ApplicationFiled: December 3, 2010Publication date: March 31, 2011Applicants: SCHLUMBERGER TECHNOLOGY CORPORATON, TOTAL SA, CHEVRON U.S.A. INC.Inventors: Arthur MONCORGÉ, Hamdi A. TCHELEPI