Patents Assigned to SCHMID Group
  • SILICON MATERIAL SUBSTRATE DOPING METHOD, STRUCTURE AND APPLICATIONS
    Publication number: 20140361407
    Abstract: A method for forming a boron doped region within a silicon material substrate, and the resulting silicon material substrate that includes the boron doped region, each use a boron doped aluminum oxide material layer as a boron dopant source layer. The method provides the boron doped region with a sheet resistance in a range from about 15 to about 300 ohms per square. The method is also applicable, in general, to forming an n doped region, a p doped region or an n and p co-doped region within a silicon material substrate.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 11, 2014
    Applicants: SCHMID Group, University of Central Florida Research Foundation Inc.
    Inventors: Kristopher O. Davis, Winston V. Schoenfeld, Kaiyun Jiang, Dirk Habermann