Abstract: A material growing by deposition is exposed to a low energy beam of ionized dopant. The ion beam energy is sufficient to implant the dopant in the growing surface of the material. This doping method will work well for any dopant that is substantially immobile in the material at the temperature necessary for deposition growth.
Abstract: A diamond growing by chemical vapor deposition is exposed to a low energy beam of ionized dopant. The ion beam energy is sufficient to implant the dopant in the growing surface of the diamond. This doping method will work well for any dopant that is substantially immobile in the diamond at the temperature necessary for deposition growth.