Abstract: A photomask and method for coating a backside of the same with an antireflective material are disclosed. The photomask includes a transparent substrate with a front-side and a backside. The front-side absorber layer has a patterned absorber layer formed thereon. An anti-reflective layer is deposited on the backside of the substrate. More particularly, the antireflective coating may have a refractive index between 1.4 and 1.8. The anti-reflective layer allows the photomask to reduce unwanted reflections within a lithography system and therefore improve system efficacy and throughput.

Abstract: A system, method and apparatus are described for improving critical dimension uniformity in baked substrates. The system, method and apparatus provide for varying the distance between a substrate to be baked and the surface of a hot plate such that an approximately uniform temperature is obtained in the substrate during baking. In one embodiment, the substrate is positioned on a hot plate having a recess generally centered on its top side. The differences in distance between the edges of the substrates contacting the hot plate and the distance between the center region of the substrate and the bottom of the recess enable a generally uniform temperature to be obtained in the substrate.

Abstract: A system, method and apparatus are described for improving critical dimension uniformity in baked substrates. The system, method and apparatus provide for varying the distance between a substrate to be baked and the surface of a hot plate such that an approximately uniform temperature is obtained in the substrate during baking. In one embodiment, the substrate is positioned on a hot plate having a recess generally centered on its top side. The differences in distance between the edges of the substrates contacting the hot plate and the distance between the center region of the substrate and the bottom of the recess enable a generally uniform temperature to be obtained in the substrate.