Abstract: The invention relates to a method and a device for screening first particles out of a granulate comprised of first and second particles by conveying the granulate along a first screen surface which extends outward from a vibrating device, wherein the first particles have an aspect ratio a1, with a1>3:1, and the dimensions of the second particles allow them to fall through the mesh of the first screen surface.

Abstract: A soldered connection between an outer surface of a semiconductor device, connected to a substrate by means of an adhesive layer, and a connector in the form of a strip. In order that tensile forces acting on the connector do not cause the semiconductor device to become detached from the substrate or the adhesive layer, it is proposed that a supporting location extends from the outer surface of the semiconductor device, which supporting location is formed of solderable material and makes contact with the outer surface by way of a contact surface A, in or on which the connector is soldered while maintaining a distance a from the outer surface where a?10?; and/or that the distance b between the edge of the contact surface between the supporting surface and the outer surface and the entry of the connector into the supporting location or the beginning of contact therebetween is b?50?.

Abstract: A process for forming at least one local contact area of a substrate of an electrical component for contacting the contact area with a connector, in which the substrate, on the contact side, is provided with a sintered porous metal layer. To make available a mechanically durable, electrically faultless solderable contact area, it is proposed that the porous layer be compacted and/or removed in the contact area to be formed.

Abstract: The invention is related to a procedure for the heat treatment of semiconductor elements, which are fed through a process chamber in the continuous-flow procedure. With it, ceramic transport aids used for the transport of the semiconductor elements demonstrate a clearly better long-term mechanical stability compared with known procedures; it is proposed that at least, by way of example, one specific humid atmosphere be adjusted in the process chamber.

Abstract: Method for constructing a line or dotted structure on a support, especially for constructing strip-like electrically conducting contacts on a semiconductor component such as a solar cell, by applying an electrically conducting paste-like substance containing a solvent adhering to a support and subsequent hardening of the substance. After the substance is applied to the support, a medium containing a polar molecule is applied on the support and/or the substance, through which the solvent contained in the substance is extracted.

Abstract: For fastening the contact strip (8) to the back electrode layer (4) of a photovoltaic module, the back electrode layer (4) is provided on its outer side with a tin-, copper- and/or silver-containing contact layer (12). Subsequently the contact strip (8) provided with solder (17) on the joining surface is connected to the back electrode layer (4) by soldering. The contact layer (12) causes good adhesion of the back surface encapsulation material (13) to be obtained. A barrier layer (11) prevents alloying of the tin-solder with the layers (9, 10) of the back electrode layer (4).

Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<A1?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.

Abstract: The invention relates to a method and to an arrangement for localizing production errors in a semiconductor component part by generating excess charge carriers in the semiconductor component part and by determining the electric potential in said part. In order to be able to localize production errors with simple measures and without damaging the semiconductor component part, it is suggested that the semiconductor component part be stimulated to become luminescent and that the locally resolved luminescence intensity distribution be determined in order to determine the locally resolved distribution of the electric potential in the semiconductor component part.