Patents Assigned to SCINT-X AB
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Patent number: 11147527Abstract: There is provided a method and system for filling micromechanical structures with x-ray absorbing material. The method includes providing a wetting layer for enabling melted x-ray absorbing material to flow over the surface of an overall structure including the micromechanical structures, melting the x-ray absorbing material, and applying gas pressure to press the melted x-ray absorbing material into the micromechanical structures.Type: GrantFiled: June 4, 2018Date of Patent: October 19, 2021Assignee: SCINT-X ABInventors: Anna Sahlholm, Olof Svenonius, Daniel Nilsson, David Rihtnesberg
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Patent number: 10401508Abstract: Disclosed is a method for manufacturing a scintillator according to the proposed technology. The method includes providing a basic scintillator structure having micromechanical features, the basic scintillator structure having a front and a back. The method also includes applying a reflector on the front of the basic scintillator structure, and opening the back of the basic scintillator structure to create a scintillator having open ended micromechanical features.Type: GrantFiled: November 30, 2016Date of Patent: September 3, 2019Assignee: SCINT-X ABInventors: Anna Sahlholm, Olof Svenonius
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Patent number: 9541654Abstract: There is provided an x-ray scintillator (10) including a pore matrix having a plurality of pores formed in a substrate (1). Each of the pores is at least partially covered with a multi-layered coating including at least a reflective layer (2) and a protective layer (3). The at least partially coated pores are filled with scintillating material (4) for absorbing x-ray photons to produce secondary photons, preferably with a wavelength in the visible range. The reflective layer (2) of the multi-layered coating is arranged between the scintillating material (4) and the substrate (1) for reflecting the secondary photons, and the protective layer (3) of the multi-layered coating is arranged between the reflective layer (2) and the scintillating material (4) for protecting the reflective layer while allowing reflection of the secondary photons by the reflective layer.Type: GrantFiled: December 13, 2013Date of Patent: January 10, 2017Assignee: SCINT-X ABInventors: Olof Svenonius, Anna Sahlholm, Peter Norlin
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Patent number: 9117725Abstract: There is provided a pixel (100) for an image sensor, wherein the pixel (100) is based on a doped substrate (110) on which a lightly doped epitaxial layer (120) is provided. A photosensitive structure (130) and an isolating reversely biased well (140) are defined in the epitaxial layer, and the photosensitive structure (130) is encapsulated in the reversely biased well (140). Alternatively, or as a complement, the pixel (100) includes isolating wells extending on respective sides of the photosensitive structure (130) throughout the entire or at least a major part of the epitaxial layer to provide isolation from neighboring pixels of the image sensor.Type: GrantFiled: April 1, 2011Date of Patent: August 25, 2015Assignee: SCINT-X ABInventor: Olof Svenonius
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Patent number: 8908954Abstract: There is provided a method and corresponding device for noise generated by absorption of x-ray photons in an image sensor having a number of pixels. The method is based on identifying (S1) so-called hot pixels affected by absorption of x-rays, and calculating (S2), for each hot pixel, directional gradients in a number of different directions in a pixel neighborhood of the hot pixel. The method further involves selecting (S3), for each hot pixel, at least one direction among those directions having lowest gradient, and determining (S4), for each hot pixel, a replacement value based on neighborhood pixel values in the selected direction(s). For each hot pixel, the value of the hot pixel is then replaced (S5) with the determined replacement value. In this way, noise generated by the absorption of x-ray photons in the image sensor may be reduced, while substantially maintaining the resolution (sharpness) in the image.Type: GrantFiled: June 8, 2010Date of Patent: December 9, 2014Assignee: Scint-X ABInventor: Olof Svenonius
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Publication number: 20130026375Abstract: There is provided a pixel (100) for an image sensor, wherein the pixel (100) is based on a doped substrate (110) on which a lightly doped epitaxial layer (120) is provided. A photosensitive structure (130) and an isolating reversely biased well (140) are defined in the epitaxial layer, and the photosensitive structure (130) is encapsulated in the reversely biased well (140). Alternatively, or as a complement, the pixel (100) includes isolating wells extending on respective sides of the photosensitive structure (130) throughout the entire or at least a major part of the epitaxial layer to provide isolation from neighboring pixels of the image sensor.Type: ApplicationFiled: April 1, 2011Publication date: January 31, 2013Applicant: SCINT-X ABInventor: Olof Svenonius
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Publication number: 20120126130Abstract: There is provided a method and corresponding device for noise generated by absorption of x-ray photons in an image sensor having a number of pixels. The method is based on identifying (S1) so-called hot pixels affected by absorption of x-rays, and calculating (S2), for each hot pixel, directional gradients in a number of different directions in a pixel neighborhood of the hot pixel. The method further involves selecting (S3), for each hot pixel, at least one direction among those directions having lowest gradient, and determining (S4), for each hot pixel, a replacement value based on neighborhood pixel values in the selected direction(s). For each hot pixel, the value of the hot pixel is then replaced (S5) with the determined replacement value. In this way, noise generated by the absorption of x-ray photons in the image sensor may be reduced, while substantially maintaining the resolution (sharpness) in the image.Type: ApplicationFiled: June 8, 2010Publication date: May 24, 2012Applicant: SCINT-X ABInventor: Olof Svenonius