Abstract: A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

Abstract: A front surface of a semiconductor wafer is momentarily heated by irradiation with a flash of light from flash lamps. An upper radiation thermometer and a high-speed radiation thermometer unit measure a temperature of the front surface of the semiconductor wafer after the irradiation with the flash of light. The temperature data are sequentially accumulated, so that a temperature profile is acquired. An analyzer determines the highest measurement temperature of the semiconductor wafer subjected to the flash irradiation from the temperature profile to calculate a jump distance of the semiconductor wafer from a susceptor, based on the highest measurement temperature. If the calculated jump distance is greater than a predetermined threshold value, there is a high probability that the semiconductor wafer is significantly out of position, so that the transport of the semiconductor wafer to the outside is stopped.

Abstract: An upper spin chuck and a lower spin chuck are arranged in a vertical direction. In the lower spin chuck, a substrate holder sucks a center portion of a lower surface of a substrate, so that the substrate is held. In this state, a peripheral portion of the lower surface of the substrate rotated by a spin motor is cleaned by a brush of a first back surface cleaning mechanism. In the upper spin chuck, a plurality of chuck pins abut against an outer peripheral end of the substrate, so that the substrate is held. In this state, a region inward of the peripheral portion of the lower surface of the substrate rotated by the spin motor is cleaned by a brush of a second back surface cleaning mechanism. Receiving and transferring of the substrate are performed by a receiving transferring mechanism between the upper and the lower spin chucks.