Patents Assigned to SDL, Inc.
  • Patent number: 5920423
    Abstract: A WDM communication system utilizes a pump-mediated gain-shaped fiber amplifier having a predetermined nominal signal gain bandwidth and is pumped by a plurality of laser pump sources having different wavelength outputs with their outputs combined to provide a scaled power output of a weighted average of their wavelengths for launching into at least one end of the fiber amplifier. The weighted average of the output wavelengths of the individual sources is varied to produced a modified weighted average that broadens the predetermined nominal signal gain bandwidth. The wavelength weighted average of the combined pump sources may be modified by changing the operation of at least one of the pump laser sources, e.g., by changing the power level or the temperature level of one or more of the individual pump sources or by terminating the operation of one or of the individual pump sources.
    Type: Grant
    Filed: December 5, 1997
    Date of Patent: July 6, 1999
    Assignee: SDL, Inc.
    Inventors: Stephen G. Grubb, Bernard G. Fidric
  • Patent number: 5914972
    Abstract: A thermal compensator for stabilization of the operation of a waveguide DBR laser against changes in its operational parameters due to operational temperature changes so that thermally induced longitudinal mode hopping in the laser is suppressed and, in addition, the desired operational wavelength may be stabilized.
    Type: Grant
    Filed: March 24, 1997
    Date of Patent: June 22, 1999
    Assignee: SDL, Inc.
    Inventors: Sabeur Siala, Steven Sanders, Mehrdad Ziari
  • Patent number: 5914978
    Abstract: A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.
    Type: Grant
    Filed: April 29, 1998
    Date of Patent: June 22, 1999
    Assignee: SDL, Inc.
    Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
  • Patent number: 5912910
    Abstract: Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.
    Type: Grant
    Filed: May 17, 1996
    Date of Patent: June 15, 1999
    Assignee: SDL, Inc.
    Inventors: Steven Sanders, Robert J. Lang, Robert G. Waarts
  • Patent number: 5905745
    Abstract: A fiber laser uses a chirped Bragg grating as the output coupler and the grating is oriented so that the grating period increases in the direction towards the end of the cavity--the "red" end of the grating is at the output coupling end of the cavity. This grating orientation unexpectedly produces a relatively large reduction in the noise generated by the fiber laser. In one embodiment, the chirped Bragg grating is produced by transversely doping spaced-apart portions of the longitudinal fiber core with elements that modify the refractive index of the core. The "chirp" in the grating period is produced by modifying the period of the transversely doped fiber core portions during manufacture of the grating. In another embodiment, a partially reflective chirped fiber grating is used at the input side of the laser as well as at the output side.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: May 18, 1999
    Assignee: SDL, Inc.
    Inventors: Stephen G. Grubb, Raymond Zanoni, Jean-Luc Archambault
  • Patent number: 5894492
    Abstract: A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an narrow aperture end whoch may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.
    Type: Grant
    Filed: December 16, 1996
    Date of Patent: April 13, 1999
    Assignee: SDL, Inc.
    Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
  • Patent number: 5892615
    Abstract: An optical fiber used as the active amplifying medium in a fiber laser is arranged to have a high insertion loss at an undesired frequency, while retaining a low insertion loss at a desired lasing frequency. In one embodiment, loss at a Raman-shifted frequency is introduced by using an optical fiber which has multiple claddings with an index profile that includes an elevated index region located away from the core, but within the evanescent coupling region of the core. A distributed loss, which can be enhanced by bending, is produced at the Raman frequency which effectively raises the threshold at which Raman scattering occurs in the fiber and therefore results in a frequency-selective fiber. In another embodiment, an absorbing layer is placed around the core region. The absorbing layer is chosen to have a sharp absorption edge so that it absorbs highly at the Raman-shifted wavelength, but minimally at the desired lasing wavelength.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: April 6, 1999
    Assignee: SDL, Inc.
    Inventors: Stephen G. Grubb, Raymond Zanoni, Robert G. Waarts, Jean-Luc Archambault
  • Patent number: 5888886
    Abstract: High p-type impurity concentration levels are achieved in Group III nitride semiconductor layers by depositing a nitrogen-rich surface onto a supporting layer while impeding the flow of Group III element reactant. Thereafter, the Group III element source is introduced into the reactor to generate a p-type region having a high impurity concentration. The flow of the reactant from the active nitrogen source is kept below about 300 sccm and the temperature of the reactor is reduced below 1075.degree. C. in order to provide improved surface characteristics.
    Type: Grant
    Filed: June 30, 1997
    Date of Patent: March 30, 1999
    Assignee: SDL, Inc.
    Inventors: Boris N. Sverdlov, Jo Stephen Major, Jr.
  • Patent number: 5875053
    Abstract: Several embodiments are described for induced electric field or E-field poling of QPM nonlinear crystal materials, such as LiNbO.sub.3, LiTaO.sub.3 and KTP, utilizing approaches which, for the most part, avoid the necessity of depositing or otherwise forming a series of spatially disposed conductive electrodes on one surface of the nonlinear crystal material. E-field poling is accomplished by applying a high voltage electric field in excess, for example, in the range of several kilovolts per cm to several 100 kilovolts per centimeter, at room temperature to provide inverted domains in a pattern of continuously alternating domains corresponding to the regions formed on the first z surface of the crystal. The employment of single, planar-applied liquid electrodes is preferred eliminating any necessity of forming and removing previously formed metal electrodes in the poling process.
    Type: Grant
    Filed: January 23, 1997
    Date of Patent: February 23, 1999
    Assignee: SDL, Inc.
    Inventors: Jonas Webjorn, Robert G. Waarts, Derek Nam, Donald R. Scifres
  • Patent number: 5872881
    Abstract: A hermetically sealed package for an optoelectronic device such as a diode laser comprises a side wall welded to a thermally conductive heat sink mount, and a lid welded to the side wall. Testing and alignment of the device are performed before the attachment of the side wall to the mount. Feedthroughs for optical fibers and electrical connections run through the side wall. The feedthrough seals are established within projections extending away from the side wall, to protect the seals from melting during welding steps. A high-resistivity piece is present at the interface between the side walls and the base, to provide heating localized to the interface, and thereby reduce the heating of the laser during welding. The mount is pressed into a receiving structure, which is attached to an external heat sink. The bottom surface of the mount protrudes from the receiving structure, and is in direct contact with the external heat sink.
    Type: Grant
    Filed: February 12, 1997
    Date of Patent: February 16, 1999
    Assignee: SDL, Inc.
    Inventors: David M. Rossi, Harrison L. Ransom
  • Patent number: 5870512
    Abstract: An improved interferometric modulator permits the reduction in size of optical transmitters. In one embodiment, the optical modulator includes amplifiers or attentuators as phase modulators. In another embodiment, two outputs from a combiner are fed to the modulator, thus avoiding the requirement for an input splitter in the modulator. Light passing through the modulator may be both phase-shifted and amplified or attenuated by optical regulator sections located in the modulator. In another embodiment, the transmitter is included as a multiple-wavelength optical communications source, where individual current sources are provided to actuate a number of light sources feeding into the combiner, a processor controls the operation of each light source, and a modulator driver receives a data input signal to be encoded on the output of the source. By combining a number of modulators, a gray scale modulator may be fabricated for producing a gray scale output, rather than a conventional binary level output.
    Type: Grant
    Filed: May 30, 1997
    Date of Patent: February 9, 1999
    Assignee: SDL, Inc.
    Inventors: Thomas L. Koch, Donald R. Scifres
  • Patent number: 5870417
    Abstract: A waveguide DBR laser or waveguide DBR laser array may be comprised of a semiconductor gain element, or a series of semiconductor gain elements, in combination with a waveguide grating functioning as a resonant cavity end reflector for lasing operation comprising either an optical fiber having a fiber grating (fiber DBR laser) or a planar waveguide (planar waveguide DBR laser). The gain element may be comprised of a laser diode which has high efficient AR coating on its front facet so that it functions as a modulated gain element in a resonant cavity established between its rear HR facet and the grating formed in the external waveguide.
    Type: Grant
    Filed: March 21, 1997
    Date of Patent: February 9, 1999
    Assignee: SDL, Inc.
    Inventors: Jean-Marc Verdiell, Robert J. Lang, Thomas L. Koch, Mehrdad Ziari
  • Patent number: 5867305
    Abstract: Two approaches are provided for achieving an optical amplifier system capable of producing high peak power, high energy pulse outputs while suppressing scattering noise. The first approach relates to an optical amplifier system which has at least one laser diode pulsed or cw pumped double clad fiber amplifier utilized for receiving a high frequency modulated injected signal pulse of short duration from the laser diode, via the fiber core, for amplification by coupling pump light into the inner cladding of the fiber. The average signal power is sufficient to saturate the gain of the fiber so as to minimize significant onset and buildup of forward and backward scattering noise. The duty cycle of the injected signal source pulse is chosen to allow adequate gain recovery in the fiber amplifier between pulses.
    Type: Grant
    Filed: January 19, 1996
    Date of Patent: February 2, 1999
    Assignee: SDL, Inc.
    Inventors: Robert G. Waarts, Steven Sanders, David F. Welch, Donals R. Scifres
  • Patent number: 5864574
    Abstract: A semiconductor gain medium has an active gain region with a partially patterned radiation diverging region. The partially patterned radiation diverging region may be created with spatial resistive regions formed in a portion of the radiation diverging region having a narrower width than in other portions of the diverging region where the propagating radiation has a greater width. The gain region may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.
    Type: Grant
    Filed: March 29, 1996
    Date of Patent: January 26, 1999
    Assignee: SDL, Inc.
    Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
  • Patent number: 5850411
    Abstract: An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.
    Type: Grant
    Filed: September 17, 1996
    Date of Patent: December 15, 1998
    Assignee: SDL, Inc
    Inventors: Jo S. Major, Jr., Randall S. Geels
  • Patent number: 5848083
    Abstract: A mounting module (submount) for a high-power heat-dissipating element comprises a mounting plate thermal-expansion-matched to the element, a high-thermal-conductivity bulk layer having stress-relief apertures, and an auxiliary plate bonded to the bulk layer opposite the mounting plate. The element is mounted on the mounting plate, while the bulk layer is attached to the mounting plate on the side opposite the element. The apertures accommodate the expansion of the bulk layer along a major dimension of the mounting plate. The apertures run transverse to the mounting plate, so as not to impede heat flow through the mounting plate. The apertures serve either as reservoirs for excess solder during module assembly, or as conduits for cooling fluid. The bulk layer comprises either stacked sheets having aperture sections defined prior to assembly, or blocks defining the apertures at the block interfaces.
    Type: Grant
    Filed: October 24, 1996
    Date of Patent: December 8, 1998
    Assignee: SDL, Inc.
    Inventors: James M. Haden, Michael P. Staskus
  • Patent number: 5848082
    Abstract: A heatsink and an optical system are provided for use in conjunction with a dissipating semiconductor or electronic device, such as a light source, that generate a large amount of heat and is required to be cooled for optimum performance. The light source may be a laser diode or laser array or bar and is generally mounted on the heatsink with other optical components, such as collimating and focusing lenses, isolators or terminal ends of optical fibers, for coupling the output beam of the light source in aligned relation to these optical elements. Because of the higher temperature operation of such light sources, the heat generated causes thermal expansion of mechanically connected structures, such as between the heatsink for supporting the light source and its associated submount and an underlying support, usually a cooler.
    Type: Grant
    Filed: August 11, 1995
    Date of Patent: December 8, 1998
    Assignee: SDL, Inc.
    Inventor: Frank T. C. Shum
  • Patent number: 5835345
    Abstract: A cooler features a plurality of microchannels each of which includes a plurality of baffles disposed therein to avoid laminar flow within each microchannel through modulation which varies both the direction and velocity of fluid flowing through each microchannel. The microchannels are formed between a plurality of spaced apart thermally conductive fins, which are arranged to extend from a thermally conductive substrate adapted to be in physical contact with a region to be cooled. The fins are formed by stacking a plurality of thin sheets along a direction transverse to a longitudinal axis of the microchannels. Each sheet includes a plurality of apertures spaced apart along two transverse directions, both of which are transverse to the stacking direction. The baffles are formed from the spaces disposed between the apertures. Preferably, each sheet is formed from copper which is chemically etched to form the apertures in the sheet.
    Type: Grant
    Filed: October 2, 1996
    Date of Patent: November 10, 1998
    Assignee: SDL, Inc.
    Inventors: Michael P. Staskus, James M. Haden
  • Patent number: 5802092
    Abstract: A diode laser source including a laser diode whose emitting element array or elements or subarray is divided into a plurality of concurrently driven laser segments. Beam filling and focusing optics are disposed in front of the segments so that light from the segments in each element or subarray converges to a single overlapping spot. The optics include a beam filling lens array collimating the light from the segments and either a single focusing lens or a second lens array focusing the collimated light to corresponding spots. In the case of a element laser diode array, each multi-segment element or subarray of the array is individually addressable so as to be driven independently from the other multi-elements array elements. The segmentation of laser elements improves laser life by reducing thermal gradients and isolating any local failures to a single segment, while separately focusing of the segments of each subarray to overlapping light spots increases the tolerance of the source to local failures.
    Type: Grant
    Filed: October 25, 1996
    Date of Patent: September 1, 1998
    Assignee: SDL, Inc.
    Inventor: John Endriz
  • Patent number: 5799029
    Abstract: A laser system is provided for supplying high power, stable light intensity via an aperture limited delivery system to an application requiring continuous light output intensity in spite of the laser source being subjected optical feedback noise caused by external system and delivery system perturbations that cause fluctuation in laser source power intensity. Non-stable light intensity in the output is due to environmental temperature changes, and phase and amplitude changes caused by system induced perturbations such as by movement of the aperture limited delivery system and optical artifacts of the optical elements, comprising the aperture limited delivery system, introducing noise into the feedback in the laser system changing the output intensity pattern of the delivered power beam. This can be substantially remedied by the employing a monolithic, multiple, independent single mode laser source which is substantially unaffected by this noise.
    Type: Grant
    Filed: May 14, 1996
    Date of Patent: August 25, 1998
    Assignee: SDL, Inc.
    Inventors: David M. Rossi, Harrison L. Ransom, Jr.