Abstract: A data storage device can be configured at least with a first spin-torque oscillator disposed between and contacting a write pole and a shield on an air bearing surface. A second spin-torque oscillator can be disposed between and contact the write pole and shield with the second spin-torque oscillator separated from the air bearing surface by a first stabilization distance and from the first spin-torque oscillator by a second stabilization distance. The first and second spin-torque oscillators can be configured to magnetostatically couple and phase lock to produce a single microwave frequency in response to a bias field.

Abstract: Apparatus and method for scheduling requests for data transfers in a multi-device storage system. In some embodiments, a system includes at least one server coupled to a pool of storage devices to transfer data from the storage devices to client devices responsive to requests. A request scheduler is adapted to receive into a memory a plurality of requests each having a service identifier (ID) and a payload size, to set a deadline for each request responsive to the service ID and the payload size, to forward the requests to the server for processing in an order based on service ID and, responsive to the deadline being reached for a selected request, to advance the selected request for immediate processing by the server.

Abstract: A transducing head may be connected to a controller and positioned proximal a data storage medium. The controller can be connected to a wear level identification circuit and configured to identify a first data region of the data storage medium having a first wear level and a second data region of the data storage medium having a second wear level. The first and second wear levels can respectively correspond to different amounts of component degradation of the data storage device.

Abstract: An I/O device is coupled to a computing host. In some embodiments, the device is enabled to utilize memory of the computing host not directly coupled to the device to store information such as a shadow copy of a map of the device and/or state of the device. Storage of the shadow copy of the map enables one or both of the device and the computing host to utilize the shadow copy of the map, such as to decrease read latency. Storage of the state enables the device to save volatile state that would otherwise be lost when the device enters a low-power state. In some embodiments, the device implements one or more non-standard modifiers of standard commands. The non-standard modifiers modify the execution of the standard commands, providing features not present in a host protocol having only the standard commands.

Abstract: Methods for controlling an interface operation, the method including stopping an operation being processed in a storage device and switching the state of the storage device to a first state, when a condition for switching the state of the storage device to an idle state occurs in a command processing process according to a communication protocol; performing an operation of deleting information from a previous command stored in hardware of the storage device when the state of the storage device is switched to the first state; and switching the state of the storage device to the idle state after the operation of deleting the information on the previous command is completed, wherein in the first state, the storage device cannot be switched to the first state before the information from the previous command is deleted.

Abstract: A near-field transducer includes an enlarged region having a top side adjacent to a magnetic pole, a base side opposite the top side, and a circumference that extends from proximal to a media-facing surface to distal to a media-facing surface. The near-field transducer includes a peg region in contact with a region of the base side of the enlarged region, the peg region extending from the enlarged region towards the media-facing surface. The near-field transducer also includes a heat sink region having a contact side, a base side, and a circumference that extends from proximal to the media-facing surface to distal from the media-facing surface. The contact side of the heat sink region is in thermal contact with both the peg region and at least a region of the base side of the enlarged region.

Abstract: A write head having a write pole with a tip portion defining a pole tip and a paddle portion extending from the tip portion away from the pole tip, the paddle portion defining a back edge. The write head also has a coil structure having at least two active turns crossing the paddle portion, wherein a back of the coil structure is no more than 1 micrometer past the back edge of the write pole. In some implementations, a length from the pole tip to the back edge is no more than 4.5 micrometers.

Abstract: A data storage system includes data storage and random access memory. A sorting module is communicatively coupled to the random access memory and sorts data blocks of write data received in the random access memory of the data storage. A storage controller is communicatively coupled to the random access memory and the data storage and being configured to write the sorted data blocks into one or more individually-sorted granules in a granule storage area of the data storage, wherein each granule is dynamically constrained to a subset of logical block addresses. A method and processor-implemented process provide for sorting data blocks of write data received in random access memory of data storage. The method and processor-implemented process write the sorted data blocks into one or more individually-sorted granules in a granule storage area of the data storage, wherein each granule is dynamically constrained to a subset of logical block addresses.

Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

Abstract: The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.

Abstract: An example method includes providing at least two data storage areas in a memory, providing a first amount of over-provisioning for a first of the at least two data storage areas and a second amount of over-provisioning for a second of the at least two data storage areas, categorizing data based on a characteristic of the data, and storing the data in one of the at least two data storage areas based on the categorization.

Abstract: Adaptive ECC techniques for use with flash memory enable improvements in flash memory lifetime, reliability, performance, and/or storage capacity. The techniques include a set of ECC schemes with various code rates and/or various code lengths (providing different error correcting capabilities), and error statistic collecting/tracking (such as via a dedicated hardware logic block). The techniques further include encoding/decoding in accordance with one or more of the ECC schemes, and dynamically switching encoding/decoding amongst one or more of the ECC schemes based at least in part on information from the error statistic collecting/tracking (such as via a hardware logic adaptive codec receiving inputs from the dedicated error statistic collecting/tracking hardware logic block). The techniques further include selectively operating a portion (e.g., page, block) of the flash memory in various operating modes (e.g. as an MLC page or an SLC page) over time.

Abstract: Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a negative voltage, programming a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, calculating a voltage shift on the negative voltage programmed to the first cell, characterizing a shifted voltage level on the first cell as an interim voltage, and subtracting the voltage shift from the interim voltage to yield an actual voltage on the first cell.

Abstract: A fluid seal for sealing a gap region for rolling elements rotationally connecting a shaft and an outer structure of a rotating assembly. In embodiments described, the fluid seal includes an inner capillary seal and an outer capillary seal radially and axially spaced from the inner capillary seal. The inner and outer capillary seals are formed along a passageway having an axial portion and a radial portion formed along capillary surfaces of a fluid seal structure and opposed transverse and upright surfaces. In embodiments disclosed, the fluid seal structure includes a seal ring and cap or a seal plate structure. In another embodiment, a flange portion of the shaft forms the fluid seal structure.

Abstract: Systems and method relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. In one embodiment, the systems and methods include providing a flash memory circuit including a superset of memory cells, accessing a data set from a group of memory cells using a standard reference value to distinguish bit values in the group of memory cells, and based at least in part on determining that the group of memory cells was a last written group of memory cells, re-accessing a data set from the group of memory cells using a last written reference value to distinguish bit values in the group of memory cells.

Abstract: Systems and methods are disclosed for performing rewrite operations on recording bands of a data storage medium. In some embodiments, a storage device may receive a write request to be recorded to a band including a plurality of contiguous data storage areas (e.g. tracks) spanning from a first storage area to a last storage area. The device may determine a target area of the band to which to record the data, and perform a partial rewrite operation on less than all data storage areas of the band when the target area is not within a threshold number of data storage areas from the first storage area. In some embodiments, the rewrite operation may include reading data recorded in a first arrangement from the target band, modifying the data, and recording the modified data to the band in a second arrangement including a physical recording order different than the first arrangement.

Abstract: Methods, apparatuses, systems, and devices are described for providing data security. In one method, data security is provided for a computing device having a data storage drive. A predetermined geographical area within which access to the data storage drive of the computing device is permitted may be identified. A geographical location of the computing device also may be identified. When the identified geographical location of the computing device is outside of the identified geographical area, access to at least a portion of the data storage drive may be denied. When the identified geographical location of the computing device is within the identified geographical area, access to the portion (or all) of the data storage drive may be allowed.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the programmed state of a selected memory cell in the set is detected, and the selected memory cell is partially reprogrammed to return the selected memory cell to the associated initial programmed state.

Abstract: A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.

Abstract: Systems and method relating generally to data processing, and more particularly to systems and methods for scaling messages in a data decoding circuit. In one embodiment, the systems and methods include applying a variable node algorithm, applying a check node algorithm, calculating a first number of errors, calculating a second number of errors, calculating a difference between the first and second number of errors, multiplying by scalar values to yield a scaled set of messages, and re-applying the variable node algorithm to the scaled set of messages.