Patents Assigned to Seagate Technology Int'l
  • Spin memory with write pulse
    Patent number: 7596018
    Abstract: An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic state of such cell is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel. To facilitate writing, the cell is adapted carry at least a portion of a write pulse.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: September 29, 2009
    Assignee: Seagate Technology Int'l
    Inventor: Mark B. Johnson