Abstract: A calibration method and a calibration device for two-point cold calibration are suitable for calibration of any visual measuring system having a width analyzer. In particular, the method and the calibration device are used to calibrate a CCD camera in a visual measuring system used to monitor the diameter of a crystal rod being grown by a crystal growing apparatus using the well-known Czochralski process. The calibration method takes into account non-linear error and avoids the need to actually grow crystals for calibration. The calibration device is specifically designed for quick and accurate set-up.

Abstract: A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-doped silicon, pulling a nitrogen-doped silicon crystal from the melt using a seed crystal according to the Czochralski technique, forming a silicon wafer from the silicon crystal, the silicon wafer having an edge, and rounding the edge of the silicon wafer. The method may optionally include applying an electrical potential across the crucible while pulling the nitrogen-doped silicon crystal from the melt.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnetic field, such crystal having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 5 to 10 ppma and b) processing the ingot into a wafer.

Abstract: A process for forming an epitaxial layer on a semiconductor wafer substrate is provided. The process comprises providing a semiconductor wafer substrate and an area for forming an epitaxial layer on said semiconductor wafer substrate. The formation area consists essentially of an epitaxial layer process chamber. The semiconductor wafer substrate is introduced into the epitaxial layer process chamber and an epitaxial layer is formed on at least one surface of the semiconductor wafer substrate. Then, a chemical reagent is introduced into the epitaxial layer process chamber. The chemical reagent reacts with the epitaxial layer surface in situ to form an outer protective oxide layer.

Abstract: The method and apparatus of the present invention permit indirect identification of a target plane, such as the plane identified by an alignment feature, based upon the identification of a reference plane which is offset by a predetermined angle from the target plane. In addition, in order to permit alignment features to be defined at non-standard angles with respect to the axial orientation of an ingot, an apparatus is provided that includes a frame having at least two members. The first member abuts a bar extending outwardly from the stage of an x-ray diffractometer, while the second member carries an engagement member for engaging a non-standard alignment feature. The second member may be movable relative to the first member to permit the frame to be mounted upon ingots having different non-standard alignment features.

Abstract: The invention teaches a method and apparatus for the generation of electric power by recycling the heat generated by various industrial processes. Thermophotovoltaic cells are used to convert the heat radiated from the industrial apparatus used to perform the various processes into electricity. Arrays of thermophotovoltaic cells placed around the apparatus, which may optionally be surrounded by an infrared (IR) emitter. The emitter serves to convert the IR radiation of the initial heat source into IR radiation having a more uniform wavelength. The cell arrays are spaced outward from a convection barrier tube and a short pass filter that may be placed around the IR emitter. A heat sink may be placed outside of the perimeter formed by the array of thermophotovoltaic cells, this serves to cool the thermophotovoltaic arrays, and also increases the power density of the cells, which in turn improves the power generation capacity of the array.

Abstract: A method for supplying a slurry of a liquid containing suspended particles to a semiconductor processing machine, where the slurry is used in processing semiconductor wafers, is disclosed. The method includes providing a supply of slurry and delivering slurry to the semiconductor processing machine. The supply typically provides slurry from a location remote from the semiconductor processing machine to a location proximate the semiconductor processing machine, where the slurry at the location proximate the semiconductor processing machine is unpressurized. A delivery subsystem typically agitates slurry in the basin by flowing the slurry through the basin, thereby inhibiting the settling of suspended particles in the slurry.

Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Abstract: A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.

Abstract: A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.

Abstract: A slurry recycling apparatus having a first filter, a dirty side storage tank, slurry pump, second filter, clean side storage tank and slurry outlet, in which used slurry from an edge notch polishing apparatus is delivered to the first screen filter, transported to the dirty side slurry storage tank, pumped from the dirty side slurry storage tank through a second filter that filters out small particulate matter from the slurry and allows the slurry to pass to the clean side slurry storage tank, and finally to the edge notch polishing apparatus as needed. Slurry which is not immediately taken from the clean side slurry storage tank is continuously recycled through the second filter by overflowing from the clean side to the dirty side slurry storage tank where it is there pumped through the second filter back into the clean side slurry storage tank.

Abstract: An improved chuck for supporting elongated work pieces having conical end portions, such as single crystal ingots used to fabricate semiconductor wafers, while such. The chuck is typically used in a lathe for positioning and allowing rotation of the work piece during a grinding procedure that results in optimal work piece diameter. The chuck comprises a ring-shaped base, or socket, having a cavity defining a central axis therethrough and a series of fastener holes for securing the base to a headstock or tailstock of a lathe. The base receives within the cavity a portion of a chuck insert. The chuck insert defines a work piece support surface that is coaxial with the central axis when the chuck insert is disposed in a nominal position within the cavity of the base. The work piece support surface will typically define a continuous, arcuate, convex surface capable of supporting work pieces having conical end portions of varying diameters.

Abstract: A water spray subsystem apparatus and method of treating discharge gas designed for use in the gas discharge zone of a Czochralski crystal growing apparatus. The subsystem composes a structure containing or defining a water spray body, which is capable of providing a water spray into the discharge gas stream from the CZ chamber. The water is supplied into the discharge gas in the form of a spray or a mist in order to provide for intimate contact between the droplets of sprayed water and the discharge gas stream. Contacting the discharge gas stream with the water spray cools the gas stream, causes the reaction of SiO to SiO2, and causes the precipitation of cooled SiO2 and SiC out of the discharge gas stream.

Abstract: A chuck body defines an axial bore for receiving an object or material to be chucked. A radially inclined bore that opens at least partially into an axial bore is provided in the chuck body. A chuck stopper is fitted into the radially inclined bore such that the chuck stopper extends at least partially into the axial bore to engage the object or material to be chucked. An axis of the radially inclined bore forms a non-zero angle &agr; other than ninety degrees with respect to an axis A of the axial bore. The angle &agr; is between zero and ninety degrees, preferably, between about forty-five and ninety degrees. Various means for maintaining the chuck stopper in the radially inclined bore in a desired chucking position may be used.

Abstract: Processes for polishing acid etched wafers include contacting wafers, such as a silicon wafers, with an aqueous hydrogen peroxide solution, and then polishing the wafers with an aqueous alkaline slurry. The processes can prevent edge stain by forming a passivation layer on the wafers.

Abstract: A method for fabricating wafers is provided that uses a potassium-based oxidizer in the presence of hydrofluoric acid as the chemical etchant for etching the wafer edge. The potassium-based chemical etchant is preferably potassium permanganate KMnO4 that is mixed with hydrofluoric acid such that the ratio of hydrofluoric acid to potassium permanganate is between 2:1 and 4:1. The method for fabricating wafers initially divides a crystal ingot into a plurality of wafers before grinding the wafer edge to size and shape the wafer. The wafer can then be subjected to alkaline cleaning and acid etching. After a polysilicon layer is deposited on the wafer for gettering purposes and a silicon dioxide back seal layer, if any, is deposited, the wafer is then etched with the potassium-based chemical oxidizer in the presence of hydrofluoric acid to oxidize and remove the polysilicon layer and any silicon dioxide layer from the edge. The wafer is then rinsed and thermally annealed prior to undergoing edge polishing.

Abstract: The present invention is directed to the use of a resin trap device to remove large resin particles from water in a water purification system to thereby protect downstream ultrafiltration equipment. The present invention includes a resin trap device which comprises a housing and a resin strainer disposed within the housing. The resin strainer includes a plurality of openings having a particle pass size of between about 100 &mgr;m and about 250 &mgr;m, and thus allows water and small particles to pass through the resin trap device and large particles to be retained in the resin trap device. The present invention also includes a water purification system including a water source, a resin bed and the resin trap device, and a method of purifying water using the resin trap device of the invention.

Abstract: A process for forming an epitaxial layer on a semiconductor wafer substrate is provided. The process comprises providing a semiconductor wafer substrate and an area for forming an epitaxial layer on said semiconductor wafer substrate. The formation area consists essentially of an epitaxial layer process chamber. The semiconductor wafer substrate is introduced into the epitaxial layer process chamber and an epitaxial layer is formed on at least one surface of the semiconductor wafer substrate. At least one epitaxial layer surface is substantially hydrophobic. Then, a chemical reagent is introduced into said epitaxial layer process chamber. The chemical reagent reacts with the epitaxial layer surface in situ to form an outer layer.

Abstract: A system and method are provided which removes bromine biocide used in effluent process streams without the use of chemicals or complex mechanical systems. In particular, the system and method of the present invention remove bromine biocide by photodissociating the bromine, thereby forming innocuous salts. Ultraviolet energy may be used to provide the energy for photodissociation, in particular ultraviolet energy supplied by medium pressure Hg vapor lamps.

Abstract: An apparatus for transferring wafers between wafer holders such as wafer cassettes, etching drums and the like includes a tank for containing a liquid transfer medium in which the wafers can be transferred. The apparatus includes a wafer transfer unit that can transfer a plurality of wafers such as semiconductor wafers between wafer holders, and maintain the wafers in a desired relative orientation during transfer. For example, the wafers can be maintained in a parallel relationship. The apparatus can be used to automatically transfer wafers to etching drums without cross-indexing of the wafers and without manual handling of the wafers.