Abstract: A method of manufacturing a multi-layer chip capacitor by depositing a dielectric layer and a conductor layer in the form of multi-layer chip, while a width of the conductor layer is narrower than a width of the dielectric layer including adjusting and setting a distance between a single shadow mask installed to a mask set to be rotated and revolved and having a plurality of slits, positioning a dielectric layer deposition source to be perpendicular to the single shadow mask and a conductor layer deposition source to be oblique to the single shadow mask, and forming the dielectric layer and the conductor layer in the vacuum deposition while controlling the mask set to move along the X-, Y-, and Z-axes (the X-axis is the width direction, the Y-axis is the longitudinal direction, and the Z-axis is the height direction).

Abstract: The present invention carries out the vacuum deposition by setting a deposition angle between a single mask set including a shadow mask having a plurality of slits and a deposition source to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once, or adjusts slit patterns by relatively moving upper and lower mask sets that respectively include shadow masks having a plurality of slits and face each other to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once.

Abstract: The present invention carries out the vacuum deposition by setting a deposition angle between a single mask set including a shadow mask having a plurality of slits and a deposition source to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once, or adjusts slit patterns by relatively moving upper and lower mask sets that respectively include shadow masks having a plurality of slits and face each other to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once.

Abstract: A pack sealing method and device in which a slit tubular member (16) is slidably fitted around a wrapped portion of a pack (8) (a bag or envelope made of a diverse material while having a diverse size and a diverse shape) formed as a portion of the pack (8) near an opening (4) of the pack (8) is wrapped around a rod member (14), in a state in which a diverse liquid, gaseous, and solid material or object is put into the pack (8) through the opening (4). The rod member (14?) is fixedly bonded to the inner or outer surface of the pack (8) or separate from the pack (8). Where the pack (8) is a zipper pack provided with a zipper, this zipper functions as the rod member.