Abstract: A near-field optical probe has a cantilever formed of a transparent material and having a first main surface and a second main surface opposite the first main surface. A base supports the cantilever at the first main surface. A tip extends from the second main surface of the cantilever and has a microscopic aperture at an end thereof. The tip is formed of a transparent material having a higher refractive index than that of the transparent material of the cantilever to increase an amount of near-field light generated or detected by the microscopic aperture. A shade film is formed on the second main surface of the cantilever and on a surface of the tip except for the microscopic aperture.

Abstract: In an electrostatic acceleration type ink jet recording apparatus, when a voltage is preliminarily applied to ink to adjust the width of ink raises, a dedicated drive circuit has been necessary or dedicated electrodes have been necessary for forming the ink raises. According to a recording apparatus of the present invention, machining such as chamfering or steps is provided to a support body having a slit-like opening portion or, alternatively, a surface treatment such as coating an oil repellent solvent to a portion to be machined. Due to such a constitution, the width of the ink raises in the lateral direction of the opening portions can be made constant without using a method such as an electric driving so that a stable printing of dots is ensured.

Abstract: An electronic portable appliance is provided which can operate over a long time by enhancing charging efficiency of the electronic portable appliance driven on generation power and reducing useless current consumed by those other than a drive circuit, or can operate over an equivalent drive time to the conventional even where feed power is reduced by reducing the size and weight of a power feed means configured by a power generating means, booster circuit, etc. in order to reduce the size and weight of the electronic portable appliance.

Abstract: A reflective type liquid crystal display device has a first transparent substrate, a second transparent substrate, and a light scattering liquid crystal layer disposed between the first and second transparent substrates. A solar cell is disposed on the second transparent substrate. A portion of the solar cell comprises an active element for driving the light scattering liquid crystal layer.

Abstract: A thermoelectric generating electronic timepiece comprises a thermoelectric generator for generating electric power in response to a temperature difference thereacross. A heat radiating case is thermally connected to a cold pole of the thermoelectric generator for radiating heat. A heat absorbing case is thermally connected to a hot pole of the thermoelectric generator for absorbing heat. A heat insulating case thermally insulates the heat absorbing case and the heat radiating case. A band is provided for securing the thermoelectric generating electronic timepiece to the arm of a user. The band has a heat absorbing member thermally connected to the heat absorbing case for absorbing heat and a heat insulating member for restraining radiation and transfer of heat.

Abstract: An electronic apparatus which controls the driving of a load circuit in accordance with a detected feed power voltage. The feed power voltage can be accurately detected even when it is low. In order to achieve this, the apparatus in one embodiment includes a power feed unit, a boosting circuit for increasing a voltage of the supply power, a voltage detecting circuit for detecting the voltage of the supply power as increased by the boosting circuit and outputting a voltage detection signal, and the load circuit which is driven based on the supply power. A voltage detection circuit detects the supply voltage only when it is not being used to drive the load circuit.

Abstract: A semiconductor acceleration sensor comprises a cantilever structure formed from a semiconductor wafer and having a first surface for receiving an acceleration force, a second surface disposed generally orthogonal to the first surface, and strain sensing portions disposed on the second surface. A supporting body supports the cantilever structure. A plurality of bridge circuits are disposed on the second surface of the rectangular parallelepiped shaped structure. Each of the bridge circuits has a plurality of the strain sensing portions.

Abstract: A method of manufacturing a semiconductor acceleration sensor comprises forming a strain sensing section on a surface of a semiconductor wafer, fixing the semiconductor wafer to a cooled fixing stage, cutting out a structural body having the strain sensing section from the semiconductor wafer, and connecting a support member to the structural body cut from the semiconductor wafer.

Abstract: An electronic apparatus is comprised of a generator 11 in which a voltage is changed as time elapses, a booster circuit 12 for boosting an output voltage of the generator 11, and an oscillator circuit 13 that drives the booster circuit 12. When the voltage of the generator 11 changes as time elapses so that the voltage exceeds the minimum driving voltage of the oscillator circuit 13, the oscillator circuit 13 obtains power for starting oscillation from the generator 11. The oscillator circuit 13 that has started oscillation drives the booster circuit 12 to thereby boost the output voltage generated by the generator 11.

Abstract: A solid-state radiation detecting device comprises an insulation layer having a pair of opposed surfaces. First and second single crystal silicon semiconductors are disposed on respective ones of the opposed surfaces of the insulating layer. A photoelectric conversion element is disposed on the first single crystal silicon semiconductor. A signal processing circuit having a charge transfer device is disposed on the second single crystal silicon semiconductor.

Abstract: A cooling unit is structured such that a temperature sensor is formed on at least one of the substrates that form a thermoelectric conversion device to which thermoelectric elements are connected, an input/output electrode extending from the temperature sensor and an electrode formed on the other surface opposed to the substrate on which the temperature sensor is formed are connected to each other by electrically conductive material, and a control circuit for controlling a current supplied to the thermoelectric conversion device according to an output of the temperature sensor is connected thereto. By this structure, only one surface of the substrate is subjected to a manufacturing process, and there is no need for a temperature sensor such as a thermistor to be supplied as a discrete component for mounting on a substrate of the thermoelectric conversion device.

Abstract: A .pi.-type thermoelectric conversion component detects and controls temperature and at the same time exhibits a cooling performance inherently possessed by the thermoelectric conversion component without the need for mounting a discrete temperature detecting unit. To achieve this, a temperature detecting unit, such as a thin film thermistor or doped semiconductor region, is directly integrated on a surface of a substrate forming the thermoelectric component. In one embodiment, a monocrystalline silicon wafer is used as at least one of the opposing substrates of the thermoelectric conversion component, a temperature detecting unit having a diffused resistor is formed therein. An electrode of the temperature detecting unit is connected to an electrode formed on the opposing substrate to reduce the thermal load.

Abstract: A semiconductor acceleration sensor comprises a base having a first surface for receiving an acceleration force and a second surface disposed generally perpendicular to the first surface. A first detector is disposed on the second surface of the base for detecting an acceleration force in a horizontal direction of the base. A second detector is disposed on the second surface of the base for detecting an acceleration force in a vertical direction of the base. A support member is connected to one end of the base for supporting and fixing the base.

Abstract: An IC is configured by using a circuit form comprising a CMOS and also a new current inverter element, thereby to reduce current consumption of ICs having a function of converting an output from a photodiode or the like to a voltage and a function of amplifying the output.

Abstract: A miniature radio apparatus for use in transmission or reception of electic waves has a pair of antenna terminals insulated from each other. The pair of antenna terminals are so formed as to be brought into contact with, or to be capacitively-coupled to, different parts of the human body, respectively. One of the pair of antenna terminals is formed so as to be brought into contact with one of the arms, ears, or fingers of the user. The miniature radio apparatus also has a detection/control device for detecting whether the antenna terminals are in contact with, or capacitively-coupled to, different parts of the human body, respectively, and controlling the transmission or reception of electric waves. Consequently, it is possible to obtain a practical gain, and also to enlarge the range of communication so that the quality of communication is improved. It is, furthermore, possible to receive electric waves without an arm band antenna.

Abstract: A semiconductor acceleration sensor comprises a sensor element having a first surface for receiving an acceleration force and second opposite surfaces disposed generally perpendicular to the first surface, a support for supporting and fixing the sensor element, and a detecting device disposed on the second opposite surfaces of the sensor element for detecting a variation of a physical quantity due to an acceleration force applied to the first surface of the sensor element.

Abstract: An electronic apparatus that performs switching with the use of a piezoelectric element comprises a piezoelectric element 11, a first monitor electrode 15, and a second monitor electrode 16, the latter two being provided thereon and intended to output electric shock signals that are generated when a shock has been applied to the piezoelectric element 11 to thereby distort it. Whereby, a shock is applied to the electronic apparatus that contains the piezoelectric element 11 and a shock is applied to the built-in piezoelectric element 11. This makes it possible to output for the purpose of controlling the operation of the respective functions an electronic shock signal that is generated when the piezoelectric element 11 is distorted. As a result, it is possible to reduce the number of switch parts for, and hence the size of, the electronic apparatus and reduce the amount of time and labor for performing the switching operation by utilizing the piezoelectric effect of the piezoelectric element.

Abstract: A semiconductor device comprises a reference voltage device for outputting a constant voltage, a voltage dividing device receptive of the constant voltage for dividing the constant voltage and outputting different currents, a digital signal processing device receptive of the different currents outputted by the voltage dividing device and outputting voltages, and a voltage amplifying device receptive of at least a ground voltage and one of the voltages outputted by the digital signal processing device and outputting a signal produced by amplifying the voltage of the digital signal processing device.

Abstract: A semiconductor device comprises a semiconductor acceleration sensor having a cuboid-shaped cantilever cut from a semiconductor wafer, a detecting device disposed on the cantilever for detecting a displacement of the cantilever due to an acceleration force applied to the cantilever, and a supporter for supporting and fixing the cantilever at one end thereof.

Abstract: A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.