Abstract: In a method of manufacturing a semiconductor device, a passivation film made of a polyimide resin film is formed on a front surface of a semiconductor wafer including a scribe line and an outer circumferential portion. Thereafter, only the passivation film which is formed on the scribe line of the semiconductor wafer and on the outer circumferential portion of the semiconductor wafer is selectively removed. A protective tape is then bonded onto the front surface of the semiconductor wafer, followed by grinding of a rear surface of the semiconductor wafer.