Abstract: A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.

Abstract: System and method for preparing a sample for micro-analysis, comprising: (a) sample precursor holding unit, for supporting and holding a sample precursor; (b) transporting and positioning unit, for transporting and positioning the sample precursor holding unit; (c) optical imaging unit, for optically imaging, recognizing, and identifying, target features on the sample precursor, and for monitoring the sample preparation; (d) picking and placing unit, for picking and placing the sample precursor and system components from initial positions to other functionally dependent positions; (e) micro-groove generating unit, for generating at least one micro-groove in a surface of the sample precursor, wherein the micro-groove generating unit includes components for controlling formation of each micro-groove in the surface; and (f) cryogenic sectioning unit, for cryogenically sectioning the sample precursor to a pre-determined configuration and size, for forming the prepared sample.

Abstract: Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly; and an ion beam directing and multi-deflecting assembly, for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

Abstract: A method and apparatus are described for cleaving a relatively thin semiconductor wafer for inspecting a target feature on a workface thereof by: producing, on a first lateral face of the semiconductor wafer, laterally of the workface on one side of the target feature, an indentation in alignment with the target feature; and inducing by impact, in a second lateral face of the semiconductor wafer, laterally of the workface on the opposite side of the target feature, a shock wave substantially in alignment with the target feature and the indentation on the first lateral face, to split the semiconductor wafer along a cleavage plane essentially coinciding with the target feature and the indentation.