Abstract: An Inorganic Lift-Off-Profile-Process (referred to herein as “ILOPP”) is described wherein a portion of a surface inorganic oxide is etched from a substrate oxide surface and under a photoresist edge that supports a sacrificial metal layer. This oxide etched profile under the sacrificial photoresist/metal edge improves Lift-Off of the sacrificial metal layer and delivers smoother, improved metal edge definition in addition to an improved planer surface (flatness) as compared to known LOP technologies.
Type:
Grant
Filed:
October 31, 2018
Date of Patent:
October 8, 2019
Assignee:
Semi Automation & Technologies, Inc.
Inventors:
Leon Benton Pearce, Glenn Anthony Silveira