Abstract: The disclosure provides a common mode voltage dynamic modulation circuit, a method thereof and a class-D audio power amplifier. The modulation circuit includes: a signal input terminal and a common mode voltage dynamic adjustment module. The signal input terminal is used to receive an audio signal and output a differential audio signal to the common mode voltage dynamic adjustment module. The common mode voltage dynamic adjustment module is used to dynamically adjust a common mode voltage of the differential audio signal according to a preset static common mode bias and a normalized processing result of a swing of the audio signal, track an amplitude of an input audio signal in real time and obtain a continuously adjusted common mode voltage.
Abstract: The present disclosure relates to an LED lighting device for strawberry seedling raising. The LED lighting device for strawberry seedling raising according to an exemplary embodiment of the present disclosure includes: a light emitting unit composed of a first light emitting part composed of a red region wavelength emission LED and a blue region wavelength emission LED and a second light emitting part composed of the red region wavelength emission LED and an infrared region wavelength emission LED; and a control part for controlling the light emitting unit to manage a strawberry seedling raising, and controlling each LED included in the first light emitting part or the second light emitting part to be turned on/off based on a preset seedling raising mode.
Type:
Application
Filed:
July 28, 2020
Publication date:
May 25, 2023
Applicant:
SEMI CO., LTD.
Inventors:
Hyo LEE, Young Choul PARK, Noh Joon PARK, Kang Hwa LEE, Seung Wook JUNG
Abstract: Disclosed herein is an overwater photovoltaic panel installation structure having an environment-friendly marine-farm-type mooring anchor module that supports a photovoltaic panel on the water and includes a growth space where aquatic organisms are growable. The environment-friendly marine-farm-type mooring anchor module including a growth space where aquatic organisms are growable, includes an anchor module body defining an external appearance thereof, a frame section disposed inside the anchor module body and made of a more rigid material than the anchor module body, and a connection section exposed through an upper surface of the anchor module body and having both lower ends coupled to the frame section. The anchor module body has a plurality of growth space sections recessed from at least one surface thereof to provide a growth space for aquatic organisms.
Abstract: A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.
Abstract: A trench power transistor includes a semiconductor body having opposite first and second surfaces, and including at least one active region. Such region includes a trench electrode structure, a well, and a source. The trench electrode structure has an electrode trench recessed from the first surface, and includes first, second, and third insulating layers sequentially disposed over bottom and surrounding walls of the electrode trench, a shield electrode enclosed by the third insulating layer, a fourth insulating layer disposed on the first, second, and third insulating layers, and a gate electrode surrounded by the fourth insulating layer. The second insulating layer made of a nitride material and the fourth insulating layer are different in material. A production method of the transistor is also disclosed.
Abstract: An exemplary byte-oriented microcontroller includes a program memory, a program memory bus, and a core circuit. The program memory bus has a bus width wider than one instruction byte, and the core circuit is coupled to the program memory through the program memory bus for executing at least one instruction by processing a plurality of instruction bytes fetched from the program memory. The core circuit includes a fetch unit, for fetching the instruction bytes through the program memory bus and re-ordering the fetched instruction bytes to form a complete instruction.