Abstract: A process for the passivation of the surface of certain semiconductor materials whereby there is formed a surface film. A mercury-cadmium-telluride (HgCdTe) semiconductor may be subjected to surface anodization in a bath comprising a fluoride resulting in a fluorine-containing surface film. The composition of the protective film can be varied according to the bath used in the electrochemical process for the production of the surface layer.The invention further relates to semiconductors of the mercury cadmium telluride type passivated by the application of such surface films.
Type:
Grant
Filed:
September 30, 1988
Date of Patent:
October 9, 1990
Assignee:
Semi-Conductor Devices, a Tadiran-Rafael Partnership