Abstract: Provided is a semiconductor device, including: a semiconductor substrate; a first conductive type well which is formed on the semiconductor substrate; first and second field oxide layers which are formed on the well, defining the active region of the device; a node junction, where second conductive type impurity ions are heavily doped, making contact with the field oxide layer in the well; a gate electrode formed by interposing a gate oxide layer between the second field oxide layer and the node junction on the well; a switching device made from an interlevel insulating layer, for covering the gate electrode, and having a contact hole exposing the node junction on the semiconductor substrate; a storage electrode which makes contact with the node junction through the contact hole; a dielectric layer formed on the storage electrode; and a memory device made of a plate electrode which is formed on the dielectric layer.