Patents Assigned to Semicon, Inc.
  • Patent number: 4242632
    Abstract: A method and apparatus for pre-stress testing a large number of electrical components having axial leads. The components are aligned in parallel so that the leads at one end terminate in approximately one plane and the leads at the other end terminate approximately in a second plane parallel to the first one. A pair of planar electrodes are applied to the respective ends of the leads and the electrodes are connected to the power source that applies the desired test voltage.
    Type: Grant
    Filed: September 11, 1978
    Date of Patent: December 30, 1980
    Assignee: Semicon, Inc.
    Inventor: Robert A. Irvin
  • Patent number: 4240088
    Abstract: A high voltage, fast acting electronic switch is formed from a reverse-biased PIN diode having an exposed intrinsic region, together with a controllable optical source for emitting radiation directly onto the intrinsic region to switch the diode from its non-conducting state to its conducting state.
    Type: Grant
    Filed: August 8, 1979
    Date of Patent: December 16, 1980
    Assignee: Semicon, Inc.
    Inventor: William C. Myers
  • Patent number: 4174561
    Abstract: A photovoltaic energy converter for converting incident radiant energy, such as solar energy, to electrical energy. The converter comprises a cell formed from a plurality of integrally interconnected p-n junction-containing semiconductor wafers. The wafers are stacked end-to-end in the cell so that the respective junctions in each wafer are parallel to each other. The efficiency and performance of the cell is improved, particularly upon exposure to concentrated sunlight, by imposing various conditions on the cell fabrication and design.
    Type: Grant
    Filed: October 27, 1977
    Date of Patent: November 20, 1979
    Assignee: Semicon, Inc.
    Inventors: Robert E. House, Robert A. Irvin, Daniel F. Kane
  • Patent number: 4082570
    Abstract: A photovoltaic energy converter for converting incident radiant energy, such as solar energy, to electrical energy. The converter comprises a cell formed from a plurality of integrally interconnected p-n junction-containing semiconductor wafers. The wafers are stacked end-to-end in the cell so that the respective junctions in each wafer are parallel to each other. The efficiency and performance of the cell is improved, particularly upon exposure to concentrated sunlight, by imposing various conditions on the cell fabrication and design.
    Type: Grant
    Filed: February 9, 1976
    Date of Patent: April 4, 1978
    Assignee: Semicon, Inc.
    Inventors: Robert E. House, Robert A. Irvin, Daniel F. Kane