Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

Abstract: A method for manufacturing a liquid crystal device involves the forming of a plurality of non-linear devices on a surface of a first substrate in an array and an insulating layer is formed overlying the non-linear devices. In order to minimize the formation of fissures in electrodes which are to be formed in contact with the upper surfaces of the respective non-linear devices arranged in a line and insulated from side surfaces of these devices through the insulating layer, the part of the insulating layer that is parallel to the surface of the substrate is removed by etching in a manner leaving only portions of the insulating layer that extend along the side surface of the device normal to the surface of the first substrate. The method also serves to prevent the effective area of a pixel defined by the electrode from being decreased by the insulating layer.