Patents Assigned to Semiconductor Components Industries, Inc.
  • Method of forming a low capacitance semiconductor device and structure therefor
    Patent number: 7619287
    Abstract: In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.
    Type: Grant
    Filed: February 6, 2007
    Date of Patent: November 17, 2009
    Assignee: Semiconductor Components Industries, Inc.
    Inventor: Prasad Venkatraman