Abstract: A semiconductor device includes a capacitor and a resistor. The capacitor includes a first plate, a capacitor dielectric layer disposed over the first plate, and a second plate disposed over the capacitor dielectric layer. The resistor includes a thin film. The thin film of the resistor and the first plate of the capacitor, formed of a same conductive material, are defined in a single patterning process.
Type:
Grant
Filed:
June 15, 2020
Date of Patent:
February 21, 2023
Assignee:
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND RESISTOR