Abstract: A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
Type:
Grant
Filed:
July 20, 2011
Date of Patent:
April 22, 2014
Assignee:
Semiconductor Energy Laborator Co., Ltd.
Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
Type:
Grant
Filed:
July 8, 2009
Date of Patent:
January 11, 2011
Assignee:
Semiconductor Energy laborator Co., Ltd.
Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. The microwave generator consists of a lisitano coil which is capable of emitting a microwave in the TE.sub.011 mode. In the light of such a microwave, a high quality film can be deposited.
Type:
Grant
Filed:
April 29, 1988
Date of Patent:
November 27, 1990
Assignee:
Semiconductor Energy Laborator Co., Ltd.