Patents Assigned to Semiconductor Energy Laboratory, Inc.
  • Patent number: 6172671
    Abstract: There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
    Type: Grant
    Filed: June 3, 1999
    Date of Patent: January 9, 2001
    Assignee: Semiconductor Energy Laboratory, Inc.
    Inventors: Tsukasa Shibuya, Atsushi Yoshinouchi, Hongyong Zhang, Akira Takenouchi
  • Patent number: 6149984
    Abstract: In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.
    Type: Grant
    Filed: May 3, 1999
    Date of Patent: November 21, 2000
    Assignee: Semiconductor Energy Laboratory, Inc.
    Inventors: Shunpei Yamazaki, Naoto Kusumoto
  • Patent number: 6124604
    Abstract: A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively and waveform rounding of an applied high-frequency signal can be reduced without increasing the number of manufacturing steps.
    Type: Grant
    Filed: December 22, 1997
    Date of Patent: September 26, 2000
    Assignee: Semiconductor Energy Laboratory, Inc.
    Inventors: Jun Koyama, Hisashi Ohtani, Yasushi Ogata, Shunpei Yamazaki
  • Patent number: 6115094
    Abstract: Among insulating layers for insulating and separating first wiring lines, second wiring lines, and pixel electrodes constituting a reflection type display device, at least one layer is made of an insulating film in which a carbon-based material or a pigment is dispersed. By this structure, a conventional step of forming a black mask can be greatly simplified.
    Type: Grant
    Filed: February 3, 1998
    Date of Patent: September 5, 2000
    Assignee: Semiconductor Energy Laboratory, Inc.
    Inventor: Takeshi Fukunaga
  • Patent number: 6061375
    Abstract: Dispersion of energy density in the longitudinal direction of excimer laser shaped into a linear beam is corrected. A gas introducing system which extends in the longitudinal direction of an oscillator and which is provided with a large number of gas injecting holes is provided within the oscillator. It allows to suppress dispersion of laser oscillating positions and to suppress the dispersion of irradiation energy density within the linear laser beam.
    Type: Grant
    Filed: October 31, 1997
    Date of Patent: May 9, 2000
    Assignee: Semiconductor Energy Laboratory, Inc.
    Inventors: Hongyong Zhang, Shunpei Yamazaki