Patents Assigned to Semiconductor Energy Labs
  • Patent number: 6169293
    Abstract: A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
    Type: Grant
    Filed: July 22, 1999
    Date of Patent: January 2, 2001
    Assignee: Semiconductor Energy Labs
    Inventor: Shunpei Yamazaki