Abstract: It is an object of the present invention to provide a rectifier circuit that can suppress deterioration or dielectric breakdown of a semiconductor element due to excessive current. A rectifier circuit of the present invention includes at least a first capacitor, a second capacitor, and a diode which are sequentially connected in series in a path which connects an input terminal and one of two output terminals, and a transistor. The second capacitor is connected between one of a source region and a drain region and a gate electrode of the transistor. Further, the other one of the source region and the drain region and the other one of two output terminals are connected each other.
Type:
Grant
Filed:
November 13, 2007
Date of Patent:
February 15, 2011
Assignee:
Semiconductor Energy Laroratory Co., Ltd.