Abstract: Semiconductor device and fabrication method are provided. The method includes: providing a base substrate with a bottom metallic layer in the base substrate and a dielectric layer on the base substrate; forming interconnect openings through the dielectric layer and exposing the bottom metallic layer, where each interconnect openings includes a contacting hole and a groove on the contacting hole; forming a first conducting layer in the contacting hole, where the first conducting layer is made of a material having a first conductivity along a direction from the bottom metallic layer to a top surface of the first conducting layer; and after forming the first conducting layer, forming a second conducting layer in the groove, where the second conducting layer is made of a material having a second conductivity along a direction parallel to the top surface of the base substrate and the first conductivity is greater than the second conductivity.