Abstract: A semiconductor device and its fabrication method are provided. A first dielectric layer is provided to cover a substrate. The first dielectric layer contains a plurality of first conductive layers. A portion of each first conductive layer is removed to form a plurality of first openings in the first dielectric layer. A second dielectric layer is formed in each first opening. A third dielectric layer having second-openings are formed on the first dielectric layer and on the second dielectric layers. Each second-opening exposes at least two adjacent second dielectric layers. Second dielectric layers exposed by a first second-opening are removed to form third openings to expose corresponding first conductive layers. Second conductive layers are formed in the third opening and the second-openings including the first second-opening. Stable electrical interconnections with high quality electrical isolations can be provided.

Abstract: An apparatus and method for regulating voltage levels. The apparatus includes a first transistor and a second transistor. The first transistor and the second transistor are each coupled to a first current source and a second current source. Additionally, the apparatus includes a third transistor coupled to the second transistor and configured to receive a first voltage from the second transistor, and a fourth transistor configured to receive the first voltage from the second transistor and generate an output voltage. Moreover, the apparatus includes an adaptive system coupled to the fourth transistor. Also, the apparatus includes a delay system coupled to the third transistor and configured to receive a sensing current from the third transistor and generate a delayed current associated with a predetermined time delay. Additionally, the apparatus includes a current generation system.