Abstract: A method of forming a via. A stacked structure has a barrier layer and a metal line is formed over a substrate. Spacers capable of serving as a barrier are formed over tapering sidewalls of the stacked structure before vias and plugs are formed.
Type:
Grant
Filed:
December 17, 1999
Date of Patent:
June 12, 2001
Assignee:
Semiconductor Manufacturing Corp.
Inventors:
Ling-Sung Wang, Chingfu Lin, Chien-Jung Wang