Patents Assigned to Semiconductor Manufacturing Internation (Beijing) Corporation
  • Post-etch treating method
    Patent number: 9064819
    Abstract: This disclosure relates to a post-etch treating method. An opening is formed by etching a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top. The treating method sequentially comprises steps of: performing a first cleaning process on the stacked structure with the opening so as to remove at least a part of the metal hard mask layer; and performing a second cleaning process on the stacked structure with the opening so as to remove etching residues.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: June 23, 2015
    Assignee: Semiconductor Manufacturing Internation (Beijing) Corporation
    Inventors: Haiyang Zhang, Minda Hu, Junqing Zhou, Dongjiang Wang