Patents Assigned to Semiconductor Manufacturing International (Beijing) Corporation Please
  • Semiconductor structure and fabrication method thereof
    Patent number: 11769707
    Abstract: A semiconductor structure is provided. The semiconductor structure includes: a fin heat-dissipation region on a substrate; a fin channel part on the fin heat-dissipation region, and an isolation structure on the substrate. A width of the fin channel part is smaller than a width of the fin heat-dissipation region. A top surface of the isolation structure is coplanar with a top surface of the fin heat-dissipation region.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: September 26, 2023
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation Please
    Inventor: Fei Zhou