Abstract: A method for manufacturing a mask for integrated circuit devices. The method includes providing a quartz substrate having a surface and forming a MoSi film overlying the surface of the quartz substrate. The method also includes patterning the MoSi film overlying the quartz substrate to form a mask pattern. A step of forming an opaque edge structure comprising a carbon bearing material on a portion of the surface around a peripheral region of the mask pattern is also included.
Type:
Grant
Filed:
February 6, 2004
Date of Patent:
June 12, 2007
Assignee:
Semiconductor Manufacturing International d (Shanghai) Corporation