Abstract: A semiconductor structure and a method for forming same. The structure includes: a base substrate; a gate structure, located on the base substrate; a drift region, located in the base substrate on one side of the gate structure; a body region, located in the base substrate on the other side of the gate structure; a drain region, located in the drift region on one side of the gate structure; a source region, located in the body region on the other side of the gate structure; and a floating field plate, located on the drift region between the gate structure and the drain region, where the floating field plate has notches arranged at intervals along a width direction of the gate structure, and the floating field plate also has notches arranged at intervals along a length direction of the gate structure.

Abstract: A semiconductor structure includes a substrate including a base and a plurality of fins discretely formed over the base. Each fin is made of a material including a first atom and contains openings therein. The semiconductor structure also includes a source-drain doped layer located in each opening and including a seed layer on a surface of an inner wall of the opening and a body layer on a surface of the seed layer. A material of the seed layer includes the first atom, a second atom, and a third atom. A material of the body layer includes the first atom and the second atom.

Abstract: Semiconductor devices is provided. The semiconductor structure includes a semiconductor substrate having a middle region and an edge region adjacent to the middle region, a plurality of first fins formed on the middle region of the semiconductor substrate, a plurality of second fins formed on the edge region of the semiconductor substrate, a first adjustment layer formed on sidewall surfaces of the plurality of first fins and on the middle region of the semiconductor substrate, and an isolation structure formed on the semiconductor substrate and with a top surface lower top surfaces of the plurality of first fins and the plurality of second fins.

Abstract: A semiconductor device and a fabrication method are provided. The semiconductor device includes: a base substrate; a gate structure on the base substrate including a first portion in a first region and a second portion in a second region; and a separation section in the first portion of the gate structure in the first region. A length of the first portion of the gate structure in the first region is larger than a length of the second portion of the gate structure in the second region. A top surface of the separation section is higher than a top surface of the gate structure.

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate and first gate structures and source/drain doped layers on the substrate. Each of the source/drain doped layers is located at two sides of one first gate structure. The semiconductor device further includes a dielectric layer on the substrate. The dielectric layer contains first grooves, exposing the source/drain doped layers, wherein each first groove includes a first-groove bottom part and a first-groove top part located above the first-groove bottom part, and a size of the first-groove top part is larger than a size of the first-groove bottom part. The semiconductor device further includes a first conductive structure located in the first-groove bottom part, an insulating layer located in the first-groove top part and on the first conductive structure, and a second conductive structure located in the dielectric layer and connected to the first gate structure.

Abstract: A memory structure is provided in the present disclosure. The memory structure includes a substrate, a plurality of discrete memory gate structures on the substrate where each of the plurality of memory gate structures includes a floating gate layer and a control gate layer on the floating gate layer, an isolation layer formed between adjacent memory gate structures where a top surface of the isolation layer is lower than a top surface of the control gate layer and higher than a bottom surface of the control gate layer, an opening is formed on an exposed sidewall of the control gate layer, and a bottom of the opening is lower than or coplanar with the top surface of the isolation layer, and a metal silicide layer on an exposed surface of the control gate layer and the top surface of the isolation layer.

Abstract: A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.

Abstract: A FinFET is provided. The FinFET includes a substrate including an NMOS (N-type metal-oxide-semiconductor) region; a plurality of fins formed on the substrate; an isolation layer formed between adjacent fins of the plurality of fins and on the substrate; a gate structure across a length portion of the fin and covering a portion of each of a top surface and sidewalls of the fin; and an in-situ doped epitaxial layer formed on each of the etched fin on both sides of the gate structure. The doping ions in the in-situ doped epitaxial layer are N-type ions.

Abstract: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate. The substrate includes a first region, a second region, and an isolation region between the first region and the second region. The semiconductor structure also includes a first fin, a second fin and a third fin disposed over the first region, the second region, and the isolation region, respectively. Further, the semiconductor structure includes a gate structure. The gate structure includes a first work function layer over the first region and a first portion of the isolation region, and a second work function layer over the second region and a second portion of the isolation region. An interface where the first work function layer is in contact with the second work function layer is located over a top surface of the third fin.

Abstract: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The method includes providing a substrate, forming a first dielectric layer and a plurality of gate structures, forming source-drain doped regions, and forming a source-drain plug. The first dielectric layer covers surfaces of the gate structure, the source-drain doped region and the source-drain plug. The method also includes forming a first plug in the first dielectric layer, and forming a second dielectric layer on the first dielectric layer. The first plug is in contact with a top surface of one of the source-drain plug and the gate structure. The second dielectric layer covers the first plug. Further, the method includes forming a second plug material film in the first and second dielectric layers. The second plug material film is in contact with the top surface of one of the source-drain plug and the gate structure.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The method may include providing a to-be-etched layer; forming a plurality of core layers on the to-be-etched layer, wherein a first opening and a second opening are formed between different adjacent core layers and a width of the first opening is smaller than a width of the second opening; forming a first sacrificial material layer on the to-be-etched layer and the plurality of core layers; forming a second sacrificial layer on a portion of the first sacrificial material layer in the first opening to form a sacrificial structure in the first opening; removing the plurality of core layers after forming the sacrificial structure; forming sidewall spacers on sidewall surfaces of the sacrificial structure after removing the plurality of core layers; and removing the sacrificial structure after forming the sidewall spacers.

Abstract: Semiconductor structure and method of forming semiconductor structure are provided. The semiconductor structure includes a substrate, a first isolation structure, and a first nanostructure and a second nanostructure on two sides of the first isolation structure. The semiconductor structure also includes a second isolation structure, and a third nanostructure and a fourth nanostructure on two sides of the second isolation structure. A top of the second isolation structure is lower than a top of the first isolation structure. The semiconductor structure also includes a first gate structure and a second gate structure. The first gate structure and the second gate structure expose a top surface of the first isolation structure. The semiconductor structure also includes a third gate structure and a fourth gate structure. The third gate structure and the fourth gate structure are in contact with each other on a top surface of the second isolation structure.

Abstract: Semiconductor fabrication method for manufacturing an interconnect structure is provided. The semiconductor fabrication method for manufacturing an interconnect structure includes providing a substrate structure comprising a substrate, a first dielectric layer on the substrate, and a metal interconnect line extending through the first dielectric layer; removing a portion of the first dielectric layer on the metal interconnect line to form a recess exposing a surface of the metal interconnect line; forming a graphene layer on the exposed surface of the metal interconnect line; and forming a second dielectric layer filling the recess and covering the graphene layer.

Abstract: Provided are a semiconductor structure and a forming method thereof, and a photomask layout. One form of a semiconductor structure includes: a base, including a substrate and a plurality of fins arranged in parallel on the substrate, the substrate including a transistor cell area, and in the transistor cell area, in a direction perpendicular to an extending direction of the fin, the fin closest to a boundary of the transistor cell area being used as an edge fin, and the edge fin having an outer side wall facing the boundary of the transistor cell area; and a gate structure, spanning the fin and covering a part of a top and a part of a side wall of the fin, and the gate structure exposing at least a part of an outer side wall of any of the edge fins.

Abstract: A mask plate, an alignment mark and a photolithography system are provided. In one form, an alignment mark includes a plurality of alignment patterns arranged at intervals, where the alignment pattern includes a first pattern extending in a first direction and a second pattern extending in a second direction, the first pattern includes a first end and a second end which are opposite to each other in the first direction, the second pattern includes a third end and a fourth end which are opposite to each other in the second direction, the second end is connected to the third end, the fourth end is connected to the first end, and the alignment pattern is a two-dimensional linear pattern.

Abstract: A semiconductor structure and a method for forming same are provided.

Abstract: Semiconductor structures and methods for forming the same are provided.

Abstract: The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a plurality of through-silicon via (TSV) structures in an array arrangement are formed in the first substrate, and the TSV structures extend through the first substrate along a direction from the first substrate to the first dielectric layer and extend into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the plurality of TSV structures and extending through the first substrate along the direction from the first substrate to the first dielectric layer.

Abstract: The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a pad groove and a pad structure in the pad groove are formed in the first substrate and the first dielectric layer, and the pad groove extends through the first substrate along a direction from the first substrate to the first dielectric layer and extends into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the pad groove and extending through the first substrate along the direction from the first substrate to the first dielectric layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, including a plurality of protrusions; a plurality of fins formed over the substrate and aligned with the plurality of protrusions; and an isolation structure formed on the substrate and between the protrusions and the fins. An orthographic projection of each of the plurality of fins and an orthographic projection of a corresponding protrusion of the plurality of protrusions on the substrate coincide with each other.