Patents Assigned to Semiconductor Manufacturing International (ShenZhen) Corporation
  • Patent number: 11552470
    Abstract: An electrostatic discharge circuit includes six transistors. A power supply voltage node is coupled with a gate and a drain of a first transistor and connected to a source of a second transistor and a drain of a fifth transistor. A source of the first transistor is coupled to a ground voltage node and connected to a gate of a third transistor and a gate of a fourth transistor. A gate of the second transistor is connected to the drain of the first transistor. A source of the third transistor is connected to the drain of the second transistor and a gate of the fifth transistor. A drain of the fourth transistor is connected to a drain of the third transistor. A source of the fourth transistor and a source of the sixth transistor are connected to the ground voltage node.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: January 10, 2023
    Assignees: Semiconductor Manufacturing International (ShenZhen) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: Jue Wang