Patents Assigned to Semiconductor Manufaturing International (Shanghai) Corporation
  • Patent number: 8748313
    Abstract: A method for making a mask for semiconductor manufacturing. The method includes providing a base layer, forming a conductive layer on the base layer, and forming a photoresist layer on the conductive layer. Additionally, the method includes exposing selectively the photoresist layer to an energy illumination, developing the photoresist layer by removing a first portion of the photoresist layer, and depositing a metal layer by an electroforming process. The electroforming process includes submerging the conductive layer into a chemical bath, and applying a deposition voltage across a negative electrode and a positive electrode. Moreover, the method includes removing a second portion of the photoresist layer, and removing a first portion of the conductive layer.
    Type: Grant
    Filed: October 4, 2010
    Date of Patent: June 10, 2014
    Assignees: Semiconductor Manufaturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Hsin Chin Chen