Patents Assigned to Semiconductor Process Laboratory Co. Ld.
  • Semiconductor device and method of manufacturing the same
    Patent number: 6815824
    Abstract: The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
    Type: Grant
    Filed: June 24, 2002
    Date of Patent: November 9, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co. Ld.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura