Patents Assigned to Semiconductor Research Corporation
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Publication number: 20140264501Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: SEMICONDUCTOR RESEARCH CORPORATIONInventors: Yeul Na, KRISHNA C. SARASWAT
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Patent number: 7144803Abstract: The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.Type: GrantFiled: April 16, 2004Date of Patent: December 5, 2006Assignee: Semiconductor Research CorporationInventors: Edward R. Engbrecht, John G. Ekerdt, Yang-Ming Sun, Kurt H. Junker
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Patent number: 7015546Abstract: Deterministically doped field-effect devices and methods of making same. One or more dopant atoms, also referred to as impurities or impurity atoms, are arranged in the channel region of a device in engineered arrays. Component atoms of an engineered array are substantially fixed by controlled placement in order to provide a barrier topology designed to control of source-drain carrier flow to realize an ultra-small device with appropriate, consistent performance characteristics. Devices can be made by placing atoms using proximity probe manipulation, ion implantation, by facilitating self-assembly of the atoms as necessary, or other techniques. These atomic placement techniques are combined in example embodiments with traditional methods of forming a substrate, insulators, gates, and any other structural elements needed in order to produce practical field-effect devices.Type: GrantFiled: August 14, 2003Date of Patent: March 21, 2006Assignee: Semiconductor Research CorporationInventors: Daniel Joseph Christian Herr, Victor Vladimirovich Zhirnov
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Patent number: 6946736Abstract: Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%.Type: GrantFiled: October 23, 2002Date of Patent: September 20, 2005Assignees: Semiconductor Research Corporation, Cornell Research Foundation, Inc., Massachusetts Institute of TechnologyInventors: Karen K. Gleason, Christopher Ober, Daniel Herr
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Patent number: 6897470Abstract: Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells are created. Each bipolar cell can function as a bistable device or an oscillator, depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate and contact electrodes.Type: GrantFiled: October 14, 2003Date of Patent: May 24, 2005Assignees: Semiconductor Research Corporation, North Carolina State UniversityInventors: Daniel Joseph Christian Herr, Victor Vladimirovich Zhirnov
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Publication number: 20040132254Abstract: Deterministically doped field-effect devices and methods of making same. One or more dopant atoms, also referred to as impurities or impurity atoms, are arranged in the channel region of a device in engineered arrays. Component atoms of an engineered array are substantially fixed by controlled placement in order to provide a barrier topology designed to control of source-drain carrier flow to realize an ultra-small device with appropriate, consistent performance characteristics. Devices can be made by placing atoms using proximity probe manipulation, ion implantation, by facilitating self-assembly of the atoms as necessary, or other techniques. These atomic placement techniques are combined in example embodiments with traditional methods of forming a substrate, insulators, gates, and any other structural elements needed in order to produce practical field-effect devices.Type: ApplicationFiled: August 14, 2003Publication date: July 8, 2004Applicant: SEMICONDUCTOR RESEARCH CORPORATIONInventors: Daniel Joseph Christian Herr, Victor Vladimirovich Zhirnov
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Patent number: 6664559Abstract: Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells are created. Each bipolar cell can function as a bistable device or an oscillator, depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate and contact electrodes.Type: GrantFiled: February 23, 2000Date of Patent: December 16, 2003Assignees: Semiconductor Research Corporation, North Carolina State UniversityInventors: Daniel Joseph Christian Herr, Victor Vladimirovich Zhirnov
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Patent number: 6509138Abstract: Processes for patterning radiation sensitive layers are disclosed. In one embodiment, the process includes depositing a radiation sensitive material on a substrate by chemical vapor deposition. The radiation sensitive material is exposed to radiation to form a pattern and the pattern is developed using a supercritical fluid (SCF).Type: GrantFiled: January 12, 2000Date of Patent: January 21, 2003Assignees: Semiconductor Research Corporation, Cornell Research Foundation, Inc., Massachusetts Institute of TechnologyInventors: Karen K. Gleason, Christopher Ober, Daniel Herr