Abstract: A device for the detection of hydrogen comprising a semiconductor, a metal electrode and an insulator situated between the semiconductor and the electrode. The metal electrode is made of palladium, nickel, platinum or an alloy containing at least 20% palladium by atomic weight. In one embodiment, the device is a field-effect transistor. Means are also provided for heating the device for improving its response time.
Type:
Grant
Filed:
September 9, 1975
Date of Patent:
November 15, 1977
Assignee:
Semiconductor Sensors, Inc.
Inventors:
Christer Martinus Svensson, Leif Sigurd Lundkvist, Kurt Ingemar Lundstrom, Madurai Somanathan Shivaraman