Patents Assigned to Semiconductor Technology Academic Research Center
  • Publication number: 20160226656
    Abstract: According to one embodiment, a phase detector includes an amplifier and an analog-to-digital converter. The amplifier amplifies a voltage of a signal which is output from a digitally-controlled oscillator and is held based on a reference signal. The analog-to-digital converter converts the voltage amplified by the amplifier into a digital signal, based on the reference signal.
    Type: Application
    Filed: August 20, 2015
    Publication date: August 4, 2016
    Applicant: Semiconductor Technology Academic Research Center
    Inventor: Kenichi OKADA
  • Patent number: 8963124
    Abstract: At least first and second Si1-xGex (0?x?1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second Si1-xGex (0?x?1) layers. A lattice constant of the first Si1-xGex (0?x?1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second Si1-xGex (0?x?1) layer is matched with a lattice constant of the second material layer.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: February 24, 2015
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Masanobu Miyao, Hiroshi Nakashima, Taizoh Sadoh, Ichiro Mizushima, Masaki Yoshimaru
  • Patent number: 8941524
    Abstract: A TD converter is provided for digitally converting a delay time value into a digital value. In the TD converter, an oscillator circuit part inputs time domain data. A first-state counter circuit part measures a number of waves of an output oscillation waveform from the oscillator circuit part when time domain data is in a first state, and a second-state counter circuit part measures a number of waves of the output oscillation waveform from the oscillator circuit part when the time domain data is in a second state. An output signal generator part generates an output signal based on output count values of the first-state counter circuit part and the second-state counter circuit part, and a frequency control circuit controls the oscillator circuit part to always oscillate and to control an oscillation frequency of the oscillator circuit part.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: January 27, 2015
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Hiroshi Kawaguchi, Masahiko Yoshimoto, Toshihiro Konishi, Shintaro Izumi, Keisuke Okuno
  • Patent number: 8896378
    Abstract: A differential amplifier circuit includes a differential operational amplifier that includes a differential pair circuit and operates based on a constant bias current supplied from a bias current source circuit, and the differential amplifier circuit includes a bias current generator circuit. A current monitor circuit detects two currents flowing through the differential pair circuit in correspondence with differential input voltages inputted to the differential pair circuit, and detects a minimum current of the two currents for a difference voltage of the differential input voltages as a monitored current. A current comparator circuit compares the monitored current with the constant bias current.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: November 25, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Tetsuya Hirose, Yuji Osaki, Yumiko Tsuruya, Osamu Kobayashi
  • Patent number: 8860511
    Abstract: A frequency divider of an injection locked type capable of division by 2, division by 4, and further division by 8 with a simpler configuration is disclosed and the frequency divider includes a ring oscillator including M (M is an even number) delay elements, the tails of two delay elements M/2 delay elements apart from each other are connected to a differential pair and transistors, to the gates of which the input oscillation signal is applied, are connected to the differential pair, and the differential pair is caused to generate a differential signal of the input oscillation signal, which is a divide-by-2 signal of the input oscillation signal, and when dividing the frequency of the input oscillation signal by 8, the portion of the differential pair to be connected to the tail of the delay element is caused to have a two-stage configuration, which is a vertically stacked configuration.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: October 14, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Kenichi Okada, Ahmed Magdi Hassan Musa
  • Patent number: 8829985
    Abstract: According to one embodiment, a time difference amplifier circuit includes the first amplifier including first positive and negative inputs and first positive and negative outputs, the second amplifier including second positive and negative inputs and second positive and negative outputs, first to fourth wirings, a selection circuit including the first selection element connecting the first or fourth wirings to the second positive input, and the second selection element connecting the second or third wirings to the second negative input, and a control circuit connecting the amplifiers by the first and second wirings or by the third and fourth wirings.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 9, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Kiichi Niitsu, Naohiro Harigai, Masato Sakurai, Haruo Kobayashi
  • Patent number: 8803725
    Abstract: A single slope AD converter circuit includes a comparator that compares a ramp voltage varying with a predetermined slope as time elapses with an analog input voltage, a counter that counts a predetermined clock in parallel with the comparing process of the comparator, and a controller that outputs a clock count value corresponding to elapsed time when the ramp voltage is smaller than the analog input voltage, as an AD converted first digital value. The comparator compares the ramp voltage with a predetermined first reference voltage, the counter counts the clock in parallel with the comparing process, and the controller outputs the clock count value corresponding to the elapsed time as an AD converted second digital value.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: August 12, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Yuji Osaki, Tetsuya Hirose
  • Publication number: 20140219355
    Abstract: A motion estimation device that reduces computational complexity while maintaining high prediction performance includes: block search means searching for a reference block that most approximates a prediction target block within a search range in a past direction frame F (?) or in a future direction frame F (+); search center setting means setting a search center in F (?) and F (+); and search range setting means setting a search range around the search center in F (?) and F (+), wherein the search range setting means sets a relatively large or small search range when F (0) is a P frame and switches assignment of large and small search ranges sequentially between two neighboring prediction target blocks, and the search center setting means sets a position identified by a motion vector predictor as a search center for a frame to which the relatively small search range is assigned.
    Type: Application
    Filed: September 30, 2013
    Publication date: August 7, 2014
    Applicant: Semiconductor Technology Academic Research Center
    Inventors: Satoshi GOTO, Jinjia Zhou, Dajiang Zhou
  • Patent number: 8779951
    Abstract: According to one embodiment, a multi-bit delta-sigma time digitizer circuit includes a delay array including delay selection circuits respectively including a delay element and a multiplexer, a phase comparator calculating a time difference, an integrator integrating the time difference output, a flash A/D converter executing digital conversion, a ring oscillation circuit including the delay array, a counter measuring a number of clock signal pulses, a memory storing a delay value of the delay element, and a processor correcting an output result of the A/D converter based on the delay value when the rising timing interval is measured.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: July 15, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Satoshi Uemori, Masamichi Ishii, Haruo Kobayashi
  • Patent number: 8780010
    Abstract: A metamaterial including at least one spiral conductor. Only a magnetic permeability selected from among an effective dielectric constant and the magnetic permeability of the metamaterial becomes negative, so that the metamaterial have a negative refractive index characteristic. The material includes a plurality of unit cells arrayed in one of one-dimensional direction, two-dimensional directions, and three-dimensional directions. Each of the unit cells includes a dielectric substrate having first and second surfaces disposed in a substantially parallel relationship, and first and second spiral conductors. The first spiral conductor is formed on the first surface of the dielectric substrate, and the second spiral conductor is formed in one of a same direction as and an opposite direction to the first spiral conductor, on the second surface of the dielectric substrate, to oppose the first spiral conductor and to be electromagnetically coupled with the first spiral conductor.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: July 15, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventor: Atsushi Sanada
  • Patent number: 8709939
    Abstract: A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: April 29, 2014
    Assignees: Semiconductor Technology Academic Research Center, National University Corporation Tohoku University
    Inventors: Junichi Koike, Yoshito Fujii, Jun Iijima, Noriyoshi Shimizu, Kazuyoshi Maekawa, Koji Arita, Ryotaro Yagi, Masaki Yoshimaru
  • Patent number: 8692623
    Abstract: A control circuit controls first and second clock generator subcircuits so that one subcircuit of the first and second clock generator subcircuits operates for a comparison voltage generating interval, then another subcircuit operates for a clock generating interval, and so that the first and second clock generator subcircuits alternately repeat processes of the comparison voltage generating interval and the clock generating interval. For the comparison voltage generating interval, each of the first and second clock generator subcircuits is controlled to generate a comparison voltage and output the same voltage to an inverted output terminal of a comparator. For the clock generating interval, each of the first and second clock generator subcircuits compares an output voltage from a current-voltage converter circuit with the comparison voltage.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: April 8, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Seichiro Shiga, Tetsuya Hirose, Yuji Osaki
  • Patent number: 8692701
    Abstract: A pipelined A/D converter circuit includes a sample hold circuit configured to sample and hold an analog input signal, and output a sample hold signal, and an A/D converter circuit including A/D converter circuit parts connected to each other in cascade, and performs A/D conversion in a pipelined form. The pipelined A/D converter circuit part of each stage includes a sub-A/D converter circuit, a multiplier D/A converter circuit, and a precharge circuit. The sub-A/D converter circuit includes comparators, and A/D convert the input signal into a digital signal of predetermined bits, a multiplier D/A converter circuit for D/A converting the digital signal from the sub-A/D converter circuit into an analog control signal generated with a reference voltage served as a reference value, sample, hold and amplify the input signal by sampling capacitors based on the analog control signal.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: April 8, 2014
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Shoji Kawahito, Sung Wook Jung, Osamu Kobayashi, Yasuhide Shimizu, Takahiro Miki, Takashi Morie, Hirotomo Ishii
  • Publication number: 20140021987
    Abstract: Provided is an injection-locked-type frequency-locked oscillator capable of stable operation and exhibiting low phase noise. This injection-locked-type frequency-locked oscillator comprises: a locked loop (10) provided with a first injection-locked-type signal-controlled oscillator (14); and a second injection-locked-type signal-controlled oscillator (20). In the first injection-locked-type signal-controlled oscillator (14), an output frequency signal is made variable by an oscillation frequency control signal, and no reference clock signal is injected.
    Type: Application
    Filed: March 12, 2012
    Publication date: January 23, 2014
    Applicant: Semiconductor Technology Academic Research Center
    Inventor: Kenichi Okada
  • Patent number: 8618870
    Abstract: The voltage Vdd is set to be lower than in the normal operation (step S100), then voltage is applied to each of the power-supply voltage applied node Vdd, the ground voltage applied node Vss, the semiconductor substrate and the well so that relative high voltage between the gate of turn-on transistor and the semiconductor substrate or the gate of turn-on transistor and well (steps S110 and S120). This process accomplishes rising of the threshold voltage of the transistor that is turned on, the reduction of the variation in the threshold voltage between a plurality of the transistors of the memory cell including latch circuit, and the improvement of the voltage characteristic of the memory cell.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: December 31, 2013
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Toshiro Hiramoto, Takayasu Sakurai, Makoto Suzuki
  • Patent number: 8614570
    Abstract: A MOS transistor generates an output current based on a voltage induced across a drain and a source thereof. A gate bias voltage generator circuit generates a gate bias voltage so as to operate the MOS transistor in a strong-inversion linear region, and applies the gate bias voltage to a gate of the MOS transistor. A drain bias voltage generator circuit generates a drain bias voltage, and applies the drain bias voltage to the drain of the MOS transistor. An added bias voltage generator circuit generates an added bias voltage, which has a predetermined temperature coefficient and includes a predetermined offset voltage, so that the output current becomes constant against temperature changes. The drain bias voltage generator circuit adds the added bias voltage to the drain bias voltage, and applies a voltage of the adding results to the drain of the MOS transistor as the drain bias voltage.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: December 24, 2013
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Tetsuya Hirose, Yuji Osaki
  • Patent number: 8600443
    Abstract: A sensor network system including node devices connected in a network via predetermined propagation paths collects data measured at each node device to be aggregated into one base station via a time-synchronized sensor network system. The base station calculates a position of the signal source based on the angle estimation value of the signal from each node device and position information thereof, designates a node device located nearest to the signal source as a cluster head node device, and transmits information of the position of the signal source and the designated cluster head node device to each node device, to cluster each node device located within the number of hops from the cluster head node device as a node device belonging to each cluster. Each node device performs an emphasizing process on the received signal from the signal source, and transmits an emphasized signal to the base station.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: December 3, 2013
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Hiroshi Kawaguchi, Masahiko Yoshimoto, Shintaro Izumi
  • Publication number: 20130307713
    Abstract: A TD converter is provided for digitally converting a delay time value into a digital value. In the TD converter, an oscillator circuit part inputs time domain data. A first-state counter circuit part measures a number of waves of an output oscillation waveform from the oscillator circuit part when time domain data is in a first state, and a second-state counter circuit part measures a number of waves of the output oscillation waveform from the oscillator circuit part when the time domain data is in a second state. An output signal generator part generates an output signal based on output count values of the first-state counter circuit part and the second-state counter circuit part, and a frequency control circuit controls the oscillator circuit part to always oscillate and to control an oscillation frequency of the oscillator circuit part.
    Type: Application
    Filed: May 1, 2013
    Publication date: November 21, 2013
    Applicant: Semiconductor Technology Academic Research Center
    Inventor: Semiconductor Technology Academic Research Center
  • Patent number: 8587336
    Abstract: A reconfigurable logic block has a first circuit that configures an arithmetic circuit and a second circuit that configures a circuit outside of the arithmetic circuit. A plurality of different circuits are configured by changing the settings of predetermined signals in the first and second circuits.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: November 19, 2013
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Toshinori Sueyoshi, Masahiro Iida, Motoki Amagasaki, Kazuhiko Taketa, Taketo Heishi, Nobuharu Suzuki
  • Publication number: 20130271308
    Abstract: A single slope AD converter circuit includes a comparator that compares a ramp voltage varying with a predetermined slope as time elapses with an analog input voltage, a counter that counts a predetermined clock in parallel with the comparing process of the comparator, and a controller that outputs a clock count value corresponding to elapsed time when the ramp voltage is smaller than the analog input voltage, as an AD converted first digital value. The comparator compares the ramp voltage with a predetermined first reference voltage, the counter counts the clock in parallel with the comparing process, and the controller outputs the clock count value corresponding to the elapsed time as an AD converted second digital value.
    Type: Application
    Filed: April 15, 2013
    Publication date: October 17, 2013
    Applicant: Semiconductor Technology Academic Research Center
    Inventor: Semiconductor Technology Academic Research Center