Abstract: An object of the present invention is to provide a display device which can be manufactured with usability of a material improved and with a manufacturing step simplified and to provide a manufacturing technique thereof. One feature of a display device of the present invention is to comprise an insulating layer having an opening, a first conductive layer formed in the opening, and a second conductive layer formed over the insulating layer and the first conductive layer, wherein the first conductive layer is wider and thicker than the second conductive layer, and the second conductive layer is formed by spraying a droplet including a conductive material.
Type:
Application
Filed:
November 29, 2004
Publication date:
April 19, 2007
Applicant:
SEMICONDUCTORY ENERGY LABORATORY CO., LTD.
Inventors:
Shunpei Yamazaki, Hideaki Kuwabara, Shinji Maekawa, Gen Fujii, Toshiyuki Isa
Abstract: An object of the present invention is to provide a technique for improving characteristics of a TFT and realizing the structure of the TFT optimal for driving conditions of a pixel section and a driving circuit, using a smaller number of photo masks. A semiconductor device has a semiconductor film, a first electrode, and a first insulating film sandwiched between the semiconductor film and the first electrode, and further has a second electrode, and a second insulating film sandwiched between the semiconductor film and the second electrode. The first electrode and the second electrode overlap with each other across a channel-formed region which the semiconductor film has. A constant voltage is applied to the first electrode at any time.
Type:
Grant
Filed:
May 20, 2005
Date of Patent:
December 26, 2006
Assignee:
Semiconductory Energy Laboratory Co., Ltd.